Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors

Journal of Applied Physics

Volumn 110, Issue 8, 2011, Pages

  Eickelkamp, M ^a   Weingarten, M ^a   Rahimzadeh Khoshroo, L ^a   Ketteniss, N ^a   Behmenburg, H ^a,b   Heuken, M ^a,b   Donoval, D ^c   Chvala A ^c   Kordos P ^c,d   Kalisch, H ^a   Vescan, A ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^d INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; GATE OXIDE; HETERO FIELD EFFECT TRANSISTORS; INTERFACE STATE DENSITY; METAL OXIDE SEMICONDUCTOR; METAL-INSULATOR-SEMICONDUCTOR DIODES; METAL-INSULATOR-SEMICONDUCTORS; OXIDATION TIME; OXIDE THICKNESS; OXYGEN ATOM; PROCESSING WINDOWS; REVERSE LEAKAGE CURRENT; SQUARE ROOTS; THERMAL OXIDATION; THERMALLY OXIDIZED; THREE ORDERS OF MAGNITUDE;

CARRIER MOBILITY; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; METALLIC COMPOUNDS; MOS DEVICES; OXIDATION; SEMICONDUCTOR DIODES; TRANSISTORS; TWO DIMENSIONAL ELECTRON GAS;

FIELD EFFECT TRANSISTORS;

EID: 80655128541     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3647589     Document Type: Article

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