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Volumn 207, Issue 6, 2010, Pages 1342-1344
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Impact of gate dielectric thickness on the electrical properties of AlGaN/GaN MISHFETs on Si(111) substrate
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Author keywords
AlGaN GaN; Field effect transistor; Metal insulator semiconductor junctions; MOCVD
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Indexed keywords
ALGAN/GAN;
DEVICE DEGRADATION;
DEVICE PERFORMANCE;
DIELECTRIC LAYER;
ELECTRICAL PERFORMANCE;
ELECTRICAL PROPERTY;
GATE DIELECTRIC THICKNESS;
GATE INSULATOR;
GATE METALLIZATION;
GATE-LEAKAGE CURRENT;
HETEROSTRUCTURE FIELD EFFECT TRANSISTORS;
K-VALUE;
METAL-INSULATOR-SEMICONDUCTORS;
MIS-HFET;
MOCVD;
OXIDE THICKNESS;
RF DISPERSION;
SHEET CARRIER CONCENTRATION;
SI(111) SUBSTRATE;
SURFACE PASSIVATION;
ATOMIC LAYER DEPOSITION;
CARRIER CONCENTRATION;
DISPERSIONS;
DRAIN CURRENT;
ELECTRIC PROPERTIES;
ELECTRON MULTIPLIERS;
FIELD EFFECT TRANSISTORS;
GALLIUM NITRIDE;
GATE DIELECTRICS;
GATES (TRANSISTOR);
HAFNIUM COMPOUNDS;
LEAKAGE CURRENTS;
METAL INSULATOR BOUNDARIES;
METAL RECOVERY;
MIS DEVICES;
PASSIVATION;
SEMICONDUCTOR INSULATOR BOUNDARIES;
SEMICONDUCTOR JUNCTIONS;
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EID: 77954276712
PISSN: 18626300
EISSN: 18626319
Source Type: Journal
DOI: 10.1002/pssa.200983554 Document Type: Article |
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Times cited : (6)
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References (11)
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