Dislocation-governed current-transport mechanism in (Ni/Au)-AlGaN/AlN/GaN heterostructures

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Arslan, Engin ^a   Altndal, Şemsettin ^b   Öz̧elik, Süleyman ^b   Ozbay, Ekmel ^a  

^a BILKENT UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; HETEROJUNCTIONS; LEAKAGE (FLUID); LEAKAGE CURRENTS; SIGNAL TRANSDUCTION; TEMPERATURE DISTRIBUTION; TUNNELING (EXCAVATION); TUNNELING MACHINES;

ALGAN/ALN/GAN; ANALYTICAL EXPRESSIONS; APPLIED BIAS; CHARGE TRANSPORTS; CLOSE-IN; CURRENT MECHANISMS; CURRENT VOLTAGES; DISLOCATION DENSITIES; DISLOCATION LINES; EXPERIMENTAL DATUM; FITTING RESULTS; GENERATION RECOMBINATIONS; HETEROSTRUCTURE; HETEROSTRUCTURES; I-V CHARACTERISTICS; INHOMOGENEITIES; METAL-SEMICONDUCTOR INTERFACES; SATURATION CURRENTS; SPACE-CHARGE REGIONS; TEMPERATURE DEPENDENCES; TEMPERATURE DEPENDENCIES; TEMPERATURE DEPENDENTS; TEMPERATURE RANGES; TRANSPORT MECHANISMS; TUNNELING CURRENTS; TUNNELING PARAMETERS; X-RAY DIFFRACTION MEASUREMENTS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 59349101001     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3068202     Document Type: Article

References (32)

1. S. N. Mohammad, A. Salvador, and H. Morko̧, Proc. IEEE 83, 1420 (1996). 0018-9219
2. L. Shen, S. Heikman, B. Moran, R. Coffie, N. -Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. DenBaars, and U. K. Mishra, IEEE Electron Device Lett. 0741-3106 10.1109/55.954910 22, 457 (2001).
3. E. Arslan, S. Bütün, S. B. Lisesivdin, M. Kasap, S. Ozcelik, and E. Ozbay, J. Appl. Phys. 0021-8979 10.1063/1.2921832 103, 103701 (2008).
4. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 1687 (1998). 0003-6951
5. L. Hsu and W. Walukiewicz, Phys. Rev. B 0163-1829 10.1103/PhysRevB.56. 1520 56, 1520 (1997).
6. N. Biyikli, Ü. Özgür, X. Ni, Y. Fu, H. Morko̧, and. Kurdak, J. Appl. Phys. 0021-8979 10.1063/1.2386950 100, 103702 (2006).
7. H. Yu, D. Caliskan, and E. Ozbay, J. Appl. Phys. 0021-8979 10.1063/1.2221520 100, 033501 (2006).
8. R. Gaska, J. W. Yang, A. Osinsky, Q. Chen, M. Asif Khan, A. O. Orlov, G. L. Snider, and M. S. Shur, Appl. Phys. Lett. 0003-6951 10.1063/1.120852 72, 707 (1998).
9. A. Dadgar, C. Hums, A. Diez, J. Bläsing, and A. Krost, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2006.09.032 297, 279 (2006).
10. S. Kar, K. M. Panchal, S. Bhattacharya, and S. Varma, IEEE Trans. Electron Devices 29, 1839 (1982). 0018-9383
11. X. A. Cao, S. F. LeBoeuf, K. H. Kim, P. M. Sandvik, E. B. Stokes, A. Ebong, D. Walker, J. Kretchmer, J. Y. Lin, and H. X. Jiang, Solid-State Electron.. 46, 2291 (2002).
12. V. V. Evstropov, M. Dzhumaeva, Yu. V. Zhilyaev, N. Nazarov, A. A. Sitnikova, and L. M. Fedorov, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 0015-3222 34, 1357 (2000) V. V. Evstropov, M. Dzhumaeva, Yu. V. Zhilyaev, N. Nazarov, A. A. Sitnikova, and L. M. Fedorov, [Semiconductors 34, 1305 (2000)].
13. V. V. Evstropov, Yu. V. Zhilyaev, M. Dzhumaeva, and N. Nazarov, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 0015-3222 31, 152 (1997) V. V. Evstropov, Yu. V. Zhilyaev, M. Dzhumaeva, and N. Nazarov, [Semiconductors 31, 115 (1997)].
14. A. E. Belyaev, N. S. Boltovets, V. N. Ivanov, V. P. Klad'ko, R. V. Konakova, Ya. Ya. Kudrik, A. V. Kuchuk, V. V. Milenin, Yu. N. Sveshnikov, and V. N. Sheremet, Semiconductors 1063-7826 10.1134/S1063782608060092 42, 689 (2008).
15. M. N. Gurusinghe, S. K. Davidsson, and T. G. Andersson, Phys. Rev. B 0163-1829 10.1103/PhysRevB.72.045316 72, 045316 (2005).
16. T. Metzger, R. Hoppler, E. Born, O. Ambacher, M. Stutzmann, R. Stommer, M. Schuster, H. Gobel, S. Christiansen, M. Albrecht, and H. P. Strunk, Philos. Mag. A 0141-8610 10.1080/014186198254164 77, 1013 (1998).
17. E. Arslan, M. K. Ozturk, A. Teke, S. Ozcelik, and E. Ozbay, J. Phys. D 0022-3727 10.1088/0022-3727/41/15/155317 41, 155317 (2008).
18. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
19. A. J. Sierakowski and L. F. Eastman, J. Appl. Phys. 0021-8979 10.1063/1.371240 86, 3398 (1999).
20. A. Y. C. Yu and E. H. Snow, J. Appl. Phys. 0021-8979 10.1063/1.1656723 39, 3008 (1968).
21. D. Donoval, M. Barus, and M. Zdimal, Solid-State Electron.. 34, 1365 (1991).
22. H. Bayhan and A. Sertap Kavasoǧlu, Solid-State Electron. 0038-1101 10.1016/j.sse.2005.03.012 49, 991 (2005).
23. A. R. Riben and D. L. Feucht, Int. J. Electron. 0020-7217 10.1080/00207216608937891 20, 583 (1966).
24. C. R. Crowell and V. L. Rideout, Solid-State Electron. 0038-1101 10.1016/0038-1101(69)90117-8 12, 89 (1969).
25. C. A. Mead and W. G. Spitzer, Phys. Rev. 0096-8250 10.1103/PhysRev.134. A713 134, A713 (1964).
26. A. N. Saxena, Surf. Sci. 0039-6028 10.1016/0039-6028(69)90245-3 13, 151 (1969).
27. J. J. Marchand and K. Truong, J. Appl. Phys. 0021-8979 10.1063/1.331969 54, 7034 (1983).
28. S. Özdemir and. Atndal, Sol. Energy Mater. Sol. Cells 32, 115 (1994).
29. S. Ashok, P. P. Sharma, and S. J. Fonash, IEEE Trans. Electron Devices 27, 725 (1980). 0018-9383
30. H. Morkoc, Handbook of Nitride Semiconductors and Devices (Wiley-VCH, New York, 2008), Vol. 1.
31. V. Kumar, D. Selvanathan, A. Kuliev, S. Kim, J. Flynn, and I. Adesida, Electron. Lett. 0013-5194 10.1049/el:20030460 39, 747 (2003).
32. E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verd'u, F. J. S'anchez, M. T. Montojo, M. Eickhoff, F. Omn'es, Z. Bougrioua, and I. Moerman, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/17/9/103 17, L47 (2002).