RF performance of InAlN/GaN HFETs and MOSHFETs with fT × LG up to 21 & GHz μm

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 180-182

  Kordoš, Peter ^a   Mikulics, Martin ^b,c   Fox, Alfred ^b,c   Gregušová, Dagmar ^a   Čičo, Karol ^a   Carlin, Jean Francois ^d   Grandjean, Nicolas ^d   Novák, Jozef ^a   Fröhlich, Karol ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c JARA Fundamentals of Future Information Technology   (Germany)

^d EPFL   (Switzerland)

Author keywords

Heterostructure field effect transistor (HFET); InAlN GaN; Metal oxide semiconductor HFET (MOSHFET); RF performance

Indexed keywords

ALGAN/GAN HFETS; CURRENT GAIN CUTOFF FREQUENCY; GATE LENGTH; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; INALN/GAN HETEROSTRUCTURE; LATTICE-MATCHED; MAXIMUM OSCILLATION FREQUENCY; METAL OXIDE SEMICONDUCTOR; MOS-HFETS; MOSHFET; RF PERFORMANCE;

CUTOFF FREQUENCY; DIELECTRIC DEVICES; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 77649181357     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2038078     Document Type: Article

References (13)

1. J. Kuzmik, "Power electronics on InAlN/(In)GaN: Prospect for a record performance," IEEE Electron Device Lett., vol.22, no.11, pp. 510-512, Nov. 2001.
2. 3 passivation," IEEE Electron Device Lett., vol.30, no.9, pp. 904-906, Sep. 2009.
3. N. Sarazin, O. Jardel, E. Morvan, R. Aubry, M. Laurent, M. Magis, M. Tordjman, M. Alloui, O. Drisse, J. Di Persio, M. A. di Forte Poisson, S. L. Delage, N. Vellas, C. Gaquiere, and D. Théron, "X-band power characterization of AlInN/AlN/GaN HEMT grown on SiC substrate," Electron. Lett., vol.43, no.23, pp. 1317-1318, Nov. 2007.
4. H. Sun, A. R. Alt, H. Benedickter, C. R. Bolognesi, E. Feltin, J.-F. Carlin, M. Gonschorek, N. Grandjean, T. Maier, and R. Quai, "102-GHz AlInN/GaN HEMTs in silicon with 2.5-W/mm output power at 10 GHz," IEEE Electron Device Lett., vol.30, no.8, pp. 796-798, Aug. 2009.
5. G. Pozzovivo, J. Kuzmik, S. Golka, W. Schrenk, G. Strasser, D. Pogany, K. Èièo, M. apajna, M. Fröhlich, and J.-F. Carlin, "Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors," Appl. Phys. Lett., vol.91, no.4, pp. 043 509-1-043 509-3, Jul. 2007.
6. M. Higashiwaki, T. Mimura, and T. Matsui, "High-performance short-gate InAlN/GaN heterostructure field-effect transistors," Jpn. J. Appl. Phys., vol.45, no.32, pp. L843-L845, 2006.
7. G. H. Jessen, J. K. Gillespie, G. D. Via, A. Crespo, D. Langley, M. E. Aumer, C. S. Ward, H. G. Henry, D. B. Thomson, and D. P. Partlow, "RF power measurements of InAlN/GaN unstrained HEMTs on SiC substrates at 10 GHz," IEEE Electron Device Lett., vol.28, no.5, pp. 354-356, May 2007.
8. 3/AlInN/GaN MOSHEMT," Electron. Lett., vol.43, no.12, pp. 691-692, Jun. 2007.
9. P. Kordo, "Material and device issues of AlGaN/GaN high electron mobility transistors," in Handbook of Semiconductor Nanostructures and Devices, vol.3, Spintronics and Nanoelectronics, A. A. Balandin and K. L. Wang, Eds. Valencia, CA: Amer. Sci., 2006, pp. 95-152.
10. Y. Ohno, T. Nakao, S. Kishimoto, K. Maezawa, and T. Mizutani, "Effect of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors," Appl. Phys. Lett., vol.84, no.12, pp. 2184-2186, Mar. 2004.
11. 3/AlGaN/GaN metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., vol.90, no.12, pp. 123 513-1-123 513-3, 2007.
12. M. Marso, G. Heidelberger, K. M. Indlekofer, J. Bernat, A. Fox, P. Kordo, and H. Lüth, "Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs," IEEE Trans. Electron Devices, vol.53, no.7, pp. 1517-1523, Jul. 2006.
13. L. Ardaravièius, M. Ramonas, J. Liberis, O. Kiprijanoviè, A. Matulionis, J. Xie, M. Wu, J. H. Leach, and H. Morkoc, "Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields," J. Appl. Phys., vol.106, no.7, pp. 073 708-1-073 708-5, Oct. 2009.