InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess

IEEE Electron Device Letters

Volumn 30, Issue 11, 2009, Pages 1131-1133

  Alomari, Mohammed ^a   Medjdoub, F ^a,b   Carlin, J F ^c   Feltin, E ^c   Grandjean, N ^c   Chuvilin, A ^a   Kaiser, U ^a   Gaquiere C ^d   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b IMEC   (Belgium)

^c EPFL   (Switzerland)

^d UNIV LILLE   (France)

Author keywords

InAlN GaN; MOSHEMT; Thermal oxidation

Indexed keywords

GALLIUM NITRIDE; THERMOOXIDATION;

INALN/GAN; LATTICE-MATCHED; MAXIMUM CURRENT DENSITY; MOS-HEMT; MOSHEMT; MOSHEMTS; OXYGEN ATMOSPHERE; PULSE MEASUREMENTS; SELF-ALIGNED; THERMAL-OXIDATION;

III-V SEMICONDUCTORS;

EID: 70350619878     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2031659     Document Type: Article

References (9)

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