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Volumn 96, Issue 22, 2010, Pages

Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

(11) Donoval, D a Chvala A a Sramat R a Kovac J a Carlin, J F b Grandjean, N b Pozzovivo, G c Kuzmik J c,d Pogany, D c Strasser, G c Kordos P a,d

a SLOVAK UNIVERSITY OF TECHNOLOGY (Slovakia)

b EPFL (Switzerland)

c VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

d INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CURRENT COMPONENT; CURRENT TRANSPORT; EXPERIMENTAL DATA; MULTI-STEP; SCHOTTKY DIODES; THERMIONIC EMISSION CURRENT; TRANSPORT MECHANISM; TUNNELING CURRENT;

DIODES; LASERS; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION; TUNNELING (EXCAVATION);

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77953561753 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3442486 Document Type: Article

Times cited : (36)

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