Theoretical investigation of electrical characteristics of AlGaN/GaN modulation doped field-effect transistors

Journal of Applied Physics

Volumn 80, Issue 5, 1996, Pages 3031-3042

  Stengel, Franck ^a   Mohammad, S Noor ^a   Morkoç, Hadis ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000549713     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363162     Document Type: Article

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