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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 1, 2010, Pages 13-16

Thermal oxidation of lattice matched InAlN/GaN heterostructures

(10) Alomari, M a Chuvilin, A a Toth, L b Pecz, B b Carlin, J F c Grandjean, N c Gaquiere C d Di Forte Poisson, M A e Delage, S e Kohn, E a

a UNIVERSITY OF ULM (Germany)

b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

c EPFL (Switzerland)

d UNIV LILLE (France)

e ALCATEL THALES III V LAB (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABRUPT CHANGE; CROSS SECTION; DIFFUSION LIMITED OXIDATION; GATE LEAKAGES; HETEROSTRUCTURES; INITIAL OXIDATION; LATTICE-MATCHED; MOS DIODE; OXIDATION TIME; OXYGEN ATMOSPHERE; PARTIALLY CRYSTALLINE; SHEET CHARGE DENSITY; SQUARE ROOTS; TEM; THERMAL OXIDATION; THERMAL OXIDES;

CRYSTALLINE MATERIALS; CRYSTALS; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTIONS; NITRIDES; OXYGEN;

OXIDATION;

EID: 77949757659 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200982623 Document Type: Conference Paper

Times cited : (15)

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