Understanding acid reaction and diffusion in chemically amplified photoresists: An approach at the molecular level

Journal of Physical Chemistry C

Volumn 115, Issue 42, 2011, Pages 20367-20374

  Rodríguez Cantó, Pedro J ^a,b   Nickel, Ulrich ^a   Abargues, Rafael ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIVERSITY OF VALENCIA   (Spain)

^c Intenanomat SL   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACID DIFFUSION; ACID MOLECULES; ACID REACTIONS; BUILDING BLOCKES; CHEMICALLY AMPLIFIED PHOTORESIST; CHEMICALLY AMPLIFIED RESIST; CRITICAL DIMENSION CONTROL; DIFFUSION LENGTH; DIFFUSION PROCESS; HIGH SENSITIVITY; LINE EDGE ROUGHNESS; MESOSCALE MODEL; MOLECULAR LEVELS; MOLECULAR SCALE; NANOSCALE FEATURES; PHOTOACID GENERATORS; POSTEXPOSURE BAKE; PROCESS CONDITION; REACTION-DIFFUSION KINETICS; RESIST MATERIALS; RESIST SYSTEMS; THREE-DIMENSIONAL GRIDS;

COMPUTER SIMULATION; DIFFUSION; MOLECULAR DYNAMICS; MOLECULES; PHOTORESISTS; POLYMERS;

REACTION KINETICS;

EID: 80054950395     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp2027548     Document Type: Article

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