SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 989-992

Detailed resist film modeling in stochastic lithography simulation for line-edge roughness quantification

(3) Patsis, G P a,b Drygiannakis, D a Raptis, I a

a INSTITUTE OF MICROELECTRONICS (Greece)

b UNIVERSITY OF WEST ATTICA (Greece)

Author keywords

Line edge roughness; Lithography; Molecular simulation; Stochastic resist simulation

Indexed keywords

CRITICAL DIMENSION; DIMENSIONAL CHAIN; EDGE ROUGHNESS; LINE-EDGE ROUGHNESS; LINEWIDTH ROUGHNESS; LITHOGRAPHY PROCESS; LITHOGRAPHY SIMULATION; MOLECULAR SIMULATIONS; POLYMER CHAINS; PROCESS EFFECTS; RESIST FILMS; RESIST MATERIALS; RESIST RESOLUTION; RESIST SIMULATION; RESIST SYSTEMS;

MOLECULAR STRUCTURE; PHOTORESISTORS; STOCHASTIC SYSTEMS; THREE DIMENSIONAL;

LITHOGRAPHY;

EID: 76949104762 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2009.11.122 Document Type: Article

Times cited : (14)

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