Advanced lithography models for strict process control in the 32 nm technology node

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 513-516

  Patsis, G P ^a,d   Drygiannakis, D ^a,b   Raptis, I ^a   Gogolides, E ^a   Erdmann, A ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^c FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^d TEI of Athens ^*  (Greece)

Author keywords

High resolution lithography; LER; Mesoscale simulation; Molecular resists

Indexed keywords

193NM IMMERSION LITHOGRAPHIES; 3-D MODELS; 32 NM TECHNOLOGIES; ADVANCED LITHOGRAPHIES; DEGREE OF POLYMERIZATIONS; DIFFRACTION LIMITEDS; HIGH RESOLUTION LITHOGRAPHY; LER; MESOSCALE SIMULATION; MESOSCOPIC; MOLECULAR RESISTS; PHOTO RESIST PROCESSING; PHOTORESIST MATERIALS; SIMULATION TOOLS; STOCHASTIC SIMULATIONS;

PHOTORESISTORS; POLYMERS; SURFACE TREATMENT; THREE DIMENSIONAL;

LITHOGRAPHY;

EID: 67349242003     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.01.050     Document Type: Article

References (5)

1. Mack C.A. Proc. SPIE 4440 (2001) 59
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3. http://www.itrs.net/.
4. Schnattinger T., and Erdmann A. Proc. SPIE 6923 (2008)
5. T. Fühner, T. Schnattinger, G. Ardelean, A. Erdmann, Proc. SPIE 6520 (2007) 3F. www.drlitho.com.