New models for the simulation of post-exposure bake of chemically amplified resist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 II, Issue , 2003, Pages 1132-1142

  Matiut, Daniela ^a   Erdmann, Andreas ^a   Tollkuehn, Bernd ^a   Semmler, Armin ^b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Base diffusion; Chemically amplified resists; Iso dense bias; Line end shortening; Process linearity

Indexed keywords

ACIDS; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; MATHEMATICAL MODELS; PHOTOLITHOGRAPHY; REACTION KINETICS;

ARGON FLUORIDE; CHEMICALLY AMPLIFIED RESIST; ISO DENSE BIAS; KRYPTON FLUORIDE; LINE END SHORTENING; PHOTOGENERATED ACID; POST EXPOSURE BAKE; QUENCHER BASE;

PHOTORESISTS;

EID: 0141722698     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485080     Document Type: Conference Paper

References (12)

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