Resist parameter sensitivity analysis based on calibrated simulation for understanding resist limitations in next generation lithography

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1082-1086

  Elian, K ^a   Ruppenstein, B ^a   Noelscher, C ^a   Heubner, A ^b   Muelders, T ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

Calibrated resist models; Lithography simulation; Resolution limits; Sensitivity analysis

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; IMAGE PROCESSING; OPTICAL RESOLVING POWER; SENSITIVITY ANALYSIS;

CALIBRATED RESIST MODELS; LITHOGRAPHY SIMULATION; RESOLUTION LIMITS;

LITHOGRAPHY;

EID: 33646032732     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.071     Document Type: Article

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