Effects of model polymer chain architectures and molecular weight of conventional and chemically amplified photoresists on line-edge roughness. Stochastic simulations

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1078-1081

  Patsis, George P ^a   Gogolides, Evangelos ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

Dissolution; Monte Carlo simulation; Polymer chain architecture; Resist line edge roughness

Indexed keywords

CRITICAL IONIZATION; POLYMER CHAIN ARCHITECTURE; RESIST LINE-EDGE ROUGHNESS;

ALGORITHMS; COMPUTER SIMULATION; DISSOLUTION; IONIZATION; MOLECULAR WEIGHT; PHOTORESISTORS; RANDOM PROCESSES;

POLYMERS;

EID: 33646045039     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.039     Document Type: Article

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