Simulation of polarization charge on AlGaN/GaN high electron mobility transistors: Comparison to electron holography

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Marino, Fabio A ^a   Cullen, David A ^b   Smith, David J ^b   McCartney, Martha R ^b   Saraniti, Marco ^a  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CELLULAR MONTE CARLO; DEVICE OPERATIONS; EFFECTIVE POTENTIALS; ELECTRONIC DISPERSIONS; ELECTROSTATIC POTENTIAL DISTRIBUTION; EXPERIMENTAL EXTRACTION; FULL BAND; HETEROSTRUCTURES; OFF-AXIS ELECTRON HOLOGRAPHY; PHONON SPECTRUM; POLARIZATION CHARGES; POTENTIAL PROFILES; QUANTUM EFFECTS; THEORETICAL PREDICTION;

ELECTRON HOLOGRAPHY; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; POLARIZATION; QUANTUM ELECTRONICS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77949697826     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3311555     Document Type: Article

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