Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors

Journal of Applied Physics

Volumn 106, Issue 6, 2009, Pages 13-48

  Moresco, Michele ^a,b   Bertazzi, Francesco ^a,b   Bellotti, Enrico ^a  

^a BOSTON UNIVERSITY   (United States)

^b POLITECNICO DI TORINO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO TECHNIQUES; APPLIED BIAS; AVALANCHE PHOTODETECTORS; BREAKDOWN VOLTAGE; CARRIER MULTIPLICATION; DEFENSE SYSTEM; EXPERIMENTAL DATA; EXPERIMENTAL GROUPS; FIRST-ORDER; FULL-BAND MONTE CARLO; HIGH FIELD; HOLE MULTIPLICATION; MULTIPLICATION GAIN; P-I-N PHOTODETECTORS; PHONON DISPERSIONS; PSEUDOPOTENTIAL CALCULATION; RECURRENCE EQUATION; SCIENTIFIC APPLICATIONS; TWO-PART SERIES; WURTZITE GAN;

AVALANCHE PHOTODIODES; ELECTRIC BREAKDOWN; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; IMPACT IONIZATION; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING GALLIUM; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 70349648618     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.3213364     Document Type: Article

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