First-principles simulation of GaN material and devices: An application to GaN APDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7602, Issue , 2010, Pages

  Bellotti, Enrico ^a   Moresco, Michele ^a   Bertazzi, Francesco ^a,b  

^a BOSTON UNIVERSITY   (United States)

^b POLITECNICO DI TORINO   (Italy)

Author keywords

Avalanche photodetectors; Gallium nitride; Impact ionization; Monte Carlo

Indexed keywords

ADJUSTABLE PARAMETERS; AVALANCHE PHOTODETECTORS; BREAKDOWN VOLTAGE; CARRIER DYNAMICS; CARRIER-PHONON INTERACTION; CRYSTALLOGRAPHIC PLANE; DEFORMATION POTENTIAL; ELECTRONS AND HOLES; EMPIRICAL PSEUDOPOTENTIAL METHOD; EXPERIMENTAL DATA; EXPERIMENTAL ERRORS; FIRST-PRINCIPLES; FIRST-PRINCIPLES SIMULATIONS; FREE MODEL; FULL BAND STRUCTURES; GAN MATERIAL; HIGH ENERGY; HIGH FIELD; HOLE TRANSPORTS; INTERACTION PARAMETERS; LINEAR RESPONSE; MONTE CARLO; MULTIBAND; MULTIPLICATION GAIN; NEW MODEL; NOISE FACTOR; NONLOCAL; PHONON DISPERSIONS; REALISTIC DEVICES; TRANSPORT PHENOMENA; WURTZITE GAN;

BAND STRUCTURE; DENSITY FUNCTIONAL THEORY; ELECTRIC BREAKDOWN; ELECTRONIC STRUCTURE; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; MONTE CARLO METHODS; OPTOELECTRONIC DEVICES; PARTICLE DETECTORS; PHONONS; PHOTODETECTORS; RIGID STRUCTURES; ZINC SULFIDE;

IMPACT IONIZATION;

EID: 77951725880     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.842088     Document Type: Conference Paper

References (41)

1. J. C. Carrano, D. J. H. Lambert, C. J. Eiting, C. J. Collins, T. Li, S. Wang, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, "GaN avalanche photodiodes," Appl. Phys. Lett. 76, pp. 924-926, Feb. 2000.
2. S. Verghese, K. McIntosh, R. Molnar, L. Mahoney, R. Aggarwal, M. Geis, K. Molvar, E. Duerr, and I. Melngailis, "GaN avalanche photodiodes operationg in linear gain mode and geiger mode," IEEE Trans. Electron Devices 48, pp. 502-511, Mar. 2001.
3. J. Limb, D. Yoo, J. Ryou, W. Lee, S. Shen, R. Dupuis, M. Reed, C. Collins, M. Wraback, D. Hanser, E. Preble, and N. W. nd K. Evans, "Gan ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on gan substrates by metal-organic chemical vapor deposition," Appl. Phys. Lett. 89(1), pp. 11112-11121, 2006.
4. R. McClintock, J. L. Pau, K. Minder, C. Bayram, P. Kung, and M. Razeghi, "Hole-initiated multiplication in backilluminated gan avalanche photodiodes," Appl. Phys. Lett. 90, p. 141112, Apr. 2007.
5. R. Dupuis, J.-H. Ryoua, S.-C. Shena, P. D. Yoder, Y. Zhanga, H.-J. Kima, S. Choia, and Z. Lochner, "Growth and fabrication of high-performance gan-based ultraviolet avalanche photodiodes," J. Cryst. Growth 310, pp. 5217-5222, Nov. 2008.
6. J. Kolník, İ. H. Oǧuzman, K. F. Brennan, R. P. Wang, P. P. Ruden, and Y. Wang, "Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure," J. Appl. Phys. 78, pp. 1033-1038, July 1995.
7. J. Kolník, İ. H. Oǧuzman, K. F. Brennan, R. Wang, and P. P. Ruden, "Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN," J. Appl. Phys. 81, pp. 726-733, Jan. 1997.
8. İ. H. Oǧuzman, J. Kolník, K. F. Brennan, R. Wang, T.-N. Fang, and P. P. Ruden, "Hole transport properties of bulk zinc-blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure," J. Appl. Phys. 80, pp. 4429-4436, Oct. 1996. (Pubitemid 126556211)
9. İ. H. Oǧuzman, E. Bellotti, K. F. Brennan, J. Kolník, R. Wang, and P. P. Ruden, "Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN," J. Appl. Phys. 81, pp. 7827-7834, June 1997. (Pubitemid 127606869)
10. K. F. Brennan, E. Bellotti, M. Farahmand, H.-E. Nilsson, P. P. Ruden, and Y. Zhang, "Monte Carlo simulation of noncubic symmetry semiconducting materials and devices," IEEE Trans. Electron Devices ED-47, pp. 1882-1890, Oct. 2000.
11. E. Bellotti, M. Farahmand, M. Goano, E. Ghillino, C. Garetto, G. Ghione, H.-E. Nilsson, K. F. Brennan, and P. P. Ruden, "Simulation of carrier transport in wide band gap semiconductors," Int. J. High Speed Electron. Systems 11, pp. 525-584, June 2001.
12. E. Bellotti and F. Bertazzi, "Transport parameters for electrons and holes," in Nitride Semiconductor Devices: Principles and Simulation, J. Piprek, ed., ch. 4, pp. 69-93, Wiley-VCH Verlag, Weinheim, 2007.
13. C. Bulutay, B. K. Ridley, and N. A. Zakhleniuk, "Full-band polar optical phonon scattering analysis and negative differential conductivity in wurtzite GaN," Phys. Rev. B 62, pp. 15754-15763, Dec. 2000.
14. C. Bulutay, B. K. Ridley, and N. A. Zakhleniuk, "Comparative analysis of zinc-blende and wurtzite GaN for fullband polar optical phonon scattering and negative differential conductivity," Appl. Phys. Lett. 77, pp. 2707-2709, Oct. 2000.
15. S. Yamakawa, S. Aboud, M. Saraniti, and S. M. Goodnick, "Influence of the electron-phonon interaction on electron transport in wurtzite GaN," Semiconductor Sci. Tech. 19, pp. 475-477, Apr. 2004.
16. S. Yamakawa, R. Akis, N. Faralli, M. Saraniti, and S. Goodnick, "Rigid ion model of high field transport in GaN," J. Phys. C 21, p. 174206, 2009.
17. J. Barker, R. Akis, D. Ferry, S. Goodnick, T. Thornton, D. Koleske, A.Wickenden, and R. Henry, "High-field transport studies of gan," Physica B 314, pp. 39-41, Mar. 2001.
18. M. Wraback, H. Shen, J. C. Carrano, T. Li, J. C. Campbell, M. J. Schurman, and I. T. Ferguson, "Time-resolved electroabsorption measurement of the electron field-velocity characteristic in GaN," Appl. Phys. Lett. 76, pp. 1155-1157, Feb. 2000.
19. P. Kozodoy, H. Xing, S. P. DenBaars, U. K. Mishra, A. Saxler, R. Perrin, S. Elhamri, and W. C. Mitchel, "Heavy doping effects in Mg-doped GaN," J. Appl. Phys. 87, pp. 1832-1835, Feb. 2000.
20. A. Bhattacharyya, W. Li, J. Cabalu, T. Moustakas, D. Smith, and R. Hervig, "Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy," Appl. Phys. Lett. 85(21), pp. 4956-4958, 2004. (Pubitemid 40715180)
21. D. Lancefield and E. Eshghi, "Temperature-dependent hole transport in GaN," J. Phys: Condens. Matter 13, pp. 8939-8944, 2001.
22. K. Kim, M. Cheong, C. Hong, G. Yang, K. Lin, E. Suh, and H. Lee, "Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition," Appl. Phys. Lett. 76(9), pp. 1149-1151, 2000.
23. M. V. Fischetti and J. M. Higman, "Theory and calculation of the deformation potential electron-phonon scattering rates in semiconductors," in Monte Carlo Device Simulation: Full Band and Beyond, K. Hess, ed., ch. 5, pp. 123-160, Kluver Academic Publishers, Boston, 1991.
24. H. Mizuno, K. Taniguchi, and C. Hamaguchi, "Electron-transport simulation in silicon including anisotropic phonon scattering rate," Phys. Rev. B 48, pp. 1512-1516, July 1993.
25. S. Zollner, S. Gopalan, and M. Cardona, "Intervalley deformation potentials and scattering rates in zinc blende semiconductors," Appl. Phys. Lett. 54, pp. 614-616, Feb. 1989.
26. S. Zollner, S. Gopalan, and M. Cardona, "Microscopic theory of intervalley scattering in GaAs: k dependence of deformation potentials and scattering rates," J. Appl. Phys. 68, pp. 1682-1693, Aug. 1990.
27. F. Bertazzi, M. Moresco, and E. Bellotti, "Theory of high-field carrier transport and impact ionization in wurtzite gan. Part I: A full band monte carlo model," J. Appl. Phys. 106, p. 063718, Oct. 2009.
28. M. Goano, E. Bellotti, E. Ghillino, G. Ghione, and K. F. Brennan, "Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN," J. Appl. Phys. 88, pp. 6467-6475, Dec. 2000.
29. X. Gonze and C. Lee, "Dynamical matrices, Born effective charges, dielectric permittivity tensors, and interatomic force constants from density-functional perturbation theory," Phys. Rev. B 55, pp. 10355-10368, Apr. 1997.
30. S. Baroni, S. de Gironcoli, and A. Dal Corso, "Phonons and related crystal properties from density-functional perturbation theory," Rev. Modern Phys. 73, pp. 515-562, July 2001.
31. M. Reigrotzki, R. Redmer, N. Fitzer, S. M. Goodnick, M. Dür, and F. Schattke, "Hole initiated impact ionization in wide band gap semiconductors," J. Appl. Phys. 86, pp. 4458-4463, Oct. 1999.
32. H. K. Jung, K. Taniguchi, and C. Hamaguchi, "Impact ionization model for full band Monte Carlo simulation in GaAs," J. Appl. Phys. 79, pp. 2473-2480, Mar. 1996.
33. İ. H. Oǧuzman, E. Bellotti, K. F. Brennan, J. Kolník, R. Wang, and P. P. Ruden, "Theory of hole initiated impact ionization in bulk zincblende and wurtzite gan," J. Appl. Phys. 81, pp. 7827-7834, June 1997. (Pubitemid 127606869)
34. E. Bellotti, H.-E. Nilsson, K. F. Brennan, P. P. Ruden, and R. J. Trew, "Monte Carlo calculation of hole initiated impact ionization in 4H-SiC," J. Appl. Phys. 87, pp. 3864-3871, Apr. 2000.
35. H.-E. Nilsson, A. Martinez, E. Ghillino, U. Sannemo, E. Bellotti, and M. Goano, "Numerical modeling of hole interband tunneling in wurtzite GaN and SiC," J. Appl. Phys. 90, pp. 2847-2852, Sept. 2001.
36. J. B. Krieger and G. J. Iafrate, "Time evolution of Bloch electrons in a homogeneous electric field," Phys. Rev. B 33, pp. 5494-5500, Apr. 1986.
37. M. Moresco, F. Bertazzi, and E. Bellotti, "Theory of high-field carrier transport and impact ionization in wurtzite gan. Part II: Application to avalanche photodetectors," J. Appl. Phys. 106, p. 063719, Oct. 2009.
38. J. B. Limb, D. Yoo, J. H. Ryou, W. Lee, S. C. Shen, R. D. Dupuis, M. L. Reed, C. J. Collins, M. Wraback, D. Hanser, E. Preble, N. M.Williams, and K. Evans, "GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition," Appl. Phys. Lett. 89, p. 011112, Oct. 2006.
39. D. C. Herbert, P. A. Childs, R. A. Abram, G. C. Crow, and M.Walmsley, "Self-consistent 2-d monte carlo simulations of InSb apd," IEEE Trans. Electron Devices 52, pp. 2175-2181, Oct. 2005.
40. S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.
41. J. F. Muth, J. D. Brown, M. A. L. Johnson, Z. Yu, R. M. Kolbas, J. W. Cook, and J. F. Schetzina, "Absorption coefficient and refractive index of GaN, AlN and AlGaN," MRS Internet J. Nitride Semicond. Res. 4, p. G5.2, 1999.