Influence of the surface potential on electrical properties of Al xGa1-xN/GaN heterostructures with different Al-content: Effect of growth method

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Kohler K ^a   Muller S ^a   Aidam, R ^a   Waltereit, P ^a   Pletschen, W ^a   Kirste, L ^a   Menner, H P ^a   Bronner, W ^a   Leuther, A ^a   Quay, R ^a   Mikulla, M ^a   Ambacher, O ^a   Granzner, R ^b   Schwierz, F ^b   Buchheim, C ^b   Goldhahn, R ^c  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AL-CONTENT; BARRIER LAYERS; DEVICE FABRICATIONS; ELECTRICAL PROPERTY; EPITAXIAL TECHNIQUES; GROWN STRUCTURES; GROWTH METHOD; HETEROSTRUCTURES; LOW PRESSURES; METAL-ORGANIC; MOLECULAR BEAM EPITAXIAL; MOVPE; PHOTOREFLECTANCE SPECTROSCOPY; PROCESS TECHNOLOGIES; SCHOTTKY GATE; SHEET CARRIER CONCENTRATION;

BIOACTIVITY; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); CRYSTAL GROWTH; CRYSTALS; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; SURFACE POTENTIAL; SURFACE PROPERTIES; THRESHOLD VOLTAGE;

ALUMINUM;

EID: 77949692440     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3319585     Document Type: Article

References (30)

1. Y.-F. Wu, B. P. Keller, S. Keller, P. Kapolnek, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, Solid-State Electron. 41, 1569 (1997).
2. M. S. Shur, Solid-State Electron. 42, 2131 (1998).
3. H. Morkoc, A. Di Carlo, and R. Cingolani, Solid-State Electron. 46, 157 (2002).
4. R. Kiefer, R. Quay, S. Müller, T. Feltgen, B. Raynor, J. Schleife, K. Köhler, H. Massler, S. Ramberger, F. van Raay, A. Tessmann, M. Mikulla, and G. Weimannn, Phys. Status Solidi A 200, 191 (2003).
5. K. Krishnamurthy, J. Martin, B. Landberg, R. Vetury, and M. J. Poulton, IEEE MTT-S Int. Microwave Symp. Dig. 303 (2008).
6. O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. Sierakowski, W. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann, J. Appl. Phys. 87, 334 (2000).
7. A. Rizzi, M. Kocan, J. Malidretos, A. Schildknecht, N. Teofilov, K. Thonke, and R. Sauer, Appl. Phys. A: Mater. Sci. Process. 87, 505 (2007).
8. H. Takeuchi, Y. Yamamoto, Y. Kamo, T. Oku, and M. Nakayama, Eur. Phys. J. B 52, 311 (2006).
9. B. Jogai, J. Appl. Phys. 93, 1631 (2003).
10. P. Waltereit, S. Müller, K. Bellmann, C. Buchheim, R. Goldhahn, K. Köhler, L. Kirste, M. Baeumler, M. Damman, W. Bronner, R. Quay, and O. Ambacher, J. Appl. Phys. 106, 023535 (2009).
11. M. Kočan, A. Rizzi, H. Lüth, S. Keller, and U. K. Mishra, Phys. Status Solidi B 234, 773 (2002).
12. A. C. Schmitz, A. T. Ping, M. Asif Khan, Q. Chen, J. W. Yang, and I. Adesida, J. Electron. Mater. 27, 255 (1998).
13. K. Köhler, J. Wiegert, H. P. Menner, M. Maier, and L. Kirste, J. Appl. Phys. 103, 023706 (2008).
14. K. Köhler, S. Müller, P. Waltereit, L. Kirste, H. P. Menner, W. Bronner, and R. Quay, Phys. Status Solidi A 206, 2652 (2009).
15. R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, and M. Eickhoff, Phys. Status Solidi A 204, 447 (2007).
16. Y. Zhang, I. P. Smorchkova, C. R. Elsass, S. Keller, J. P. Ibbetson, S. P. DenBaars, U. K. Mishra, and J. Singh, J. Appl. Phys. 87, 7981 (2000).
17. R. Aidam, L. Kirste, M. Kunzer, S. Müller, and P. Waltereit, Phys. Status Solidi C 5, 1902 (2008).
18. P. Waltereit, W. Bronner, R. Quay, M. Dammann, S. Müller, R. Kiefer, B. Raynor, M. Mikulla, and G. Weimann, Phys. Status Solidi A 205, 1078 (2008).
19. O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, F. Fiorentini, V. Tilak, W. Schaff, and L. F. Eastman, J. Phys.: Condens. Matter 14, 3399 (2002).
20. A. T. Winzer, R. Goldhahn, G. Gobsch, A. Link, M. Eickhoff, U. Rossow, and A. Hangleiter, Appl. Phys. Lett. 86, 181912 (2005).
21. T. F. Kuech, P.-J. Wang, M. A. Tischler, R. Potemski, G. J. Scilla, and F. Cardone, J. Cryst. Growth 93, 624 (1988).
22. R. Gutt, private communication.
23. J. K. Jeong, J.-H. Choi, C. S. Hwang, H. J. Kim, J. H. Lee, J. H. Lee, and C. S. Kim, Appl. Phys. Lett. 84, 2575 (2004).
24. K. Köhler, M. Maier, L. Kirste, J. Wiegert, and H. P. Menner, Phys. Status Solidi C 6, S937 (2009).
25. M. Li and Y. Wang, IEEE Trans. Electron Devices 55, 261 (2008).
26. E. T. Yu, X. Z. Dang, L. S. Yu, D. Qiao, P. M. Asbeck, S. S. Lau, G. J. Sullivan, K. S. Boutros, and J. M. Redwing, Appl. Phys. Lett. 73, 1880 (1998).
27. L. Hsu and W. Walukiewicz, Appl. Phys. Lett. 73, 339 (1998).
28. J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, Appl. Phys. Lett. 77, 250 (2000).
29. S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
30. B ≈1 eV for both samples.