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Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures

(3) Miao, M S a Weber, J R a Van De Walle, C G a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ALN; BARRIER LAYERS; DRIVING MECHANISM; ELECTRON COUNTING; ELECTRON DENSITIES; OXIDATION CONDITIONS; OXIDE COVERAGE; SURFACE BARRIER; TRANSISTOR CHARACTERISTICS;

DENSITY FUNCTIONAL THEORY; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; OXIDATION; PHASE INTERFACES; STOICHIOMETRY; TWO DIMENSIONAL;

TWO DIMENSIONAL ELECTRON GAS;

EID: 77954196211 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3431391 Document Type: Article

Times cited : (100)

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