Generation-recombination effects on dark currents in CdTe-passivated midwave infrared HgCdTe photodiodes

Journal of Applied Physics

Volumn 98, Issue 1, 2005, Pages

  Jozwikowska, A ^a   Jozwikowski, K ^b   Antoszewski, J ^c   Musca, C A ^c   Nguyen, T ^c   Sewell, R H ^c   Dell, J M ^c   Faraone, L ^c   Orman, Z ^d  

^a WARSAW UNIVERSITY OF LIFE SCIENCES   (Poland)

^b MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

^c UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^d VIGO SYSTEM S A   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-TO-BAND TUNNELING; GENERATION RECOMBINATION; JUNCTION TERMINATION; NARROW-BAND-GAP DEVICES;

ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTROSTATICS; EPITAXIAL GROWTH; INTEGRATION; IONIZATION; MATHEMATICAL MODELS; MERCURY COMPOUNDS; PHOTODIODES; POISSON EQUATION;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 22944461425     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1946201     Document Type: Article

References (58)

1. T. Yamamoto, Y. Miyamoto, and K. Tonikawa, J. Cryst. Growth 72, 270 (1985).
2. S. H. Shin, J. M. Arias, M. Zandian, J. G. Pasko, and R. E. DeWames, Appl. Phys. Lett. 57, 2718 (1991).
3. T. W. James and R. E. Stoller, Appl. Phys. Lett. 44, 56 (1980).
4. R. B. Schoolar, Proc. SPIE 409, 32 (1983).
5. W. G. Oldham and A. G. Milnes, Solid-State Electron. 7, 153 (1984).
6. M. Yoshikawa, S. Ueda, and H. Takigawa, Fujitsu Sci. Tech. J. 21, 494 (1985).
7. J. J. Dubowski, J. M. Wróbel, D. F. Mithell, and G. I. Sproule, J. Cryst. Growth 94, 41 (1989).
8. P. W. Norton and P. A. Erwin, J. Vac. Sci. Technol. A 7, 503 (1989).
9. M. J. Małachowski, J. Piotrowski, and A. Rogalski, Infrared Phys. 28, 279 (1988).
10. S. M. Johnson, D. R. Rhiger, J. P. Rosbeck, J. M. Petersen, S. M. Taylor, and M. E. Boyd, J. Vac. Sci. Technol. B 10, 1499 (1992).
11. D. L. Polla, R. L. Aggarwal, J. A. Mroczkowski, J. F. Shanley, and M. B. Reine, Appl. Phys. Lett. 40, 338 (1982).
12. D. L. Polla, R. L. Aggarwal, D. A. Nelson, J. F. Shanley, and M. B. Reine, Appl. Phys. Lett. 43, 941 (1983).
13. M. C. Schen, L. Colombo, J. A. Dodge, and J. H. Tregilgas, J. Electron. Mater. 24, 539 (1995).
14. M. E. de Souza, M. Boukerche, and J. P. Faurie, J. Appl. Phys. 68, 5195 (1990).
15. M. A. Kinch, M. J. Brau, and A. Simmons, J. Appl. Phys. 44, 1649 (1972).
16. R. Fastow and Y. Nemirovsky, J. Appl. Phys. 66, 1705 (1989).
17. D. L. Polla and C. E. Jones, J. Appl. Phys. 51, 6233 (1980).
18. S. C. Barton, P. Capper, C. L. Jones, N. Metcalfe, and D. Dutton, Semicond. Sci. Technol. 11, 1163 (1996).
19. D. L. Polla and C. E. Jones, J. Appl. Phys. 52, 5118 (1981).
20. R. Fastow, D. Goren, and Y. Nemirovsky, J. Appl. Phys. 68, 3405 (1990).
21. D. L. Polla, S. P. Tobin, M. B. Reine, and A. K. Sood, J. Appl. Phys. 52, 5182 (1981).
22. M. C. Shen and L. Colombo, J. Appl. Phys. 72, 4761 (1992).
23. K. Józwikowski and A. Rogalski, J. Electron. Mater. 29, 736 (2000).
24. R. Adar, IEEE Trans. Electron Devices 39, 976 (1992).
25. C. J. Summers, B. Darling, and B. G. Martin, J. Appl. Phys. 59, 2457 (1986).
26. H. K. Gummel, IEEE Trans. Electron Devices 11, 455 (1964).
27. A. De Mari, Solid-State Electron. 11, 1021 (1968).
28. SEMICAD Devices, Dawn Technologies, Inc., California, USA.
29. APSYS, Crosslight Software Inc., Ontario, Canada.
30. K. Józwikowski, Bulletin of the Military University of Technology 5, 131 (1990).
31. K. Józwikowski, J. Piotrowski, K. Adamiec, and A. Rogalski, Proc. SPIE 3629, 74 (1999).
32. K. Jozwikowski, Infrared Phys. Technol. 41, 353 (2000).
33. K. Józwikowski and A. Rogalski, J. Appl. Phys. 90, 1286 (2001).
34. K. Jozwikowski, W. Gawron, J. Piotrowski, and A. Józwikowska, IEE Proc.-G: Circuits, Devices Syst. 150, 65 (2003).
35. J. M. Dell, J. Antoszewski, M. H. Rais, C. A. Musca, B. D. Nener, and L. Faraone, J. Electron. Mater. 29, 841 (2000).
36. T. Figielski, Phys. Status Solidi 9, 555 (1965).
37. P. T. Landsberg, Recombination in Semiconductors (Cambridge University Press, Cambridge, 1991).
38. E. Rosencher, V. Mosser, and G. Vincent, Phys. Rev. B 27, 1135 1984).
39. J. Frenkel, Phys. Rev. 54, 647 (1938).
40. J. L. Hartke, J. Appl. Phys. 39, 4871 (1968).
41. P. A. Martin, B. G. Streetman, and K. Hess, J. Appl. Phys. 52, 7409 (1981).
42. E. N. Korol, Sov. Phys. Solid State 19, 1327 (1977).
43. G. Vincent, thesis, University of Lyon, France, (1978) (unpublished).
44. A. Ajisawa and N. Oda, J. Electron. Mater. 24, 1105 (1995).
45. N. W. Mac Lachlan, Bessel Functions for Engineers, Clarendon Press, Oxford (1955).
46. J. S. Blakemore, Semiconductor Statistic, Pergamon Press (1962).
47. A. Rogalski, K. Adamiec, and J. Rutkowski, Narrow-Gap Semiconductor Photodiodes, SPIE Press, WA (2000).
48. W. Shockley and W T. Read, Phys. Rev. 87, 835 (1952).
49. W. W. Anderson, Infrared Phys. 17, 147 (1977).
50. W. W. Anderson Infrared Phys. 20, 353 (1980).
51. W. A. Beck and N. Y. Byer, IEEE Trans. Electron Devices ED-31, 297 (1984).
52. S. Margalit and Y. Shappir, Solid-State Electron. 19, 787 (1984).
53. J. P. Rosbeck and E. R. Blazejewski, J. Vac. Sci. Technol. A 3, 280 (1985).
54. V Gopal and V. D. Har, IEEE Trans. Electron Devices ED-33, 1489 (1986).
55. A. Rogalski, Infrared Photon Detectors, SPIE Optical Engineering Press, WA (1995).
56. E. O. Kane, J. Phys. Solids 12, 121 (1959).
57. E. O. Kane, J. Appl. Phys. 32, 92 (1961).
58. C. B. Duke, Tunneling in Solids, N.Y. Academic Press (1969).