Inverted Al0.25 Ga0.75 N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 97, Issue 1, 2010, Pages

  Chang, Kuo Hua ^a   Sheu, Jinn Kong ^a   Lee, Ming Lun ^b   Tu, Shang Ju ^a   Yang, Chih Ciao ^a   Kuo, Huan Shao ^a   Yang, J H ^b   Lai, Wei Chih ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; ALUMINUM CONTENTS; CONTACT LAYERS; DETECTIVITY; DEVICE STRUCTURES; DIFFERENTIAL RESISTANCES; EXTERNAL QUANTUM EFFICIENCY; GAN LAYERS; GAN TEMPLATE; INVERTED DEVICES; METAL-ORGANIC VAPOR PHASE EPITAXY; N-TYPE ALGAN; P-CONTACTS; PEAK RESPONSIVITY; PIN PHOTODIODE; REJECTION RATIOS; SOLAR-BLIND; THREE ORDERS OF MAGNITUDE; ULTRA-VIOLET; ZERO-BIAS;

ALUMINUM; CRYSTAL GROWTH; GALLIUM ALLOYS; LATTICE MISMATCH; PHOTODIODES; TENSILE STRAIN;

GALLIUM NITRIDE;

EID: 77954718981     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3462294     Document Type: Article

References (21)

1. M. Razeghi and A. Rogalski, J. Appl. Phys. JAPIAU 0021-8979 79, 7433 (1996). 10.1063/1.362677
2. J. Schalwig, G. Müller, M. Eickhoff, O. Ambacher, and M. Stutzmann, Sens. Actuators B SABCEB 0925-4005 87, 425 (2002). 10.1016/S0925-4005(02)00292-7
3. E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sa'nchez, and M. Razeghi, Appl. Phys. Lett. APPLAB 0003-6951 74, 1171 (1999). 10.1063/1.123960
4. Q. Chen, J. W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M. Z. Anwar, M. Asif Khan, D. Kuksenkov, and H. Temkin, Appl. Phys. Lett. APPLAB 0003-6951 70, 2277 (1997). 10.1063/1.118837
5. A. Osinsky, S. Gangopadhyay, R. Gaska, B. Williams, M. A. Khan, D. Kuksenkov, and H. Temkin, Appl. Phys. Lett. APPLAB 0003-6951 71, 2334 (1997). 10.1063/1.120023
6. S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 31, L139 (1992). 10.1143/JJAP.31.L139
7. L. Ting, J. C. Carrano, J. C. Campbell, M. Schurman, and I. Ferguson, IEEE J. Quantum Electron. IEJQA7 0018-9197 35, 1203 (1999). 10.1109/3.777221
8. L. C. Chen, F. R. Chen, J. J. Kai, L. Chang, J. K. Ho, C. S. Jong, C. C. Chiu, C. N. Huang, C. Y. Chen, and K. K. Shih, J. Appl. Phys. JAPIAU 0021-8979 86, 3826 (1999). 10.1063/1.371294
9. J. K. Sheu, Y. K. Su, G. C. Chi, P. L. Koh, M. J. Jou, C. M. Chang, C. C. Liu, and W. C. Hung, Appl. Phys. Lett. APPLAB 0003-6951 74, 2340 (1999). 10.1063/1.123844
10. M. Suzuki, J. Nishio, M. Onomura, and C. Hongo, J. Cryst. Growth JCRGAE 0022-0248 189-190, 511 (1998). 10.1016/S0022-0248(98)00341-8
11. W. Yang, T. Nohova, S. Krishnankutty, R. Torreano, S. McPherson, and H. Marsh, Appl. Phys. Lett. APPLAB 0003-6951 73, 1086 (1998). 10.1063/1.122092
12. J. K. Sheu, M. L. Lee, and W. C. Lai, Appl. Phys. Lett. APPLAB 0003-6951 87, 043501 (2005), and references therein. 10.1063/1.2001162
13. J. Qu, J. Li, and G. Zhang, Solid State Commun. SSCOA4 0038-1098 107, 467 (1998). 10.1016/S0038-1098(98)00253-1
14. H. Amano, M. Iwaya, N. Hayashi, T. Kashima, S. Nitta, C. Wetzel, and I. Akasaki, Phys. Status Solidi B PSSBBD 0370-1972 216, 683 (1999). 10.1002/(SICI)1521-3951(199911)216:1<683::AID-PSSB683>3.0.CO;2-4
15. S. Kamiyama, M. Iwaya, N. Hayashi, T. Takeuchi, H. Amano, I. Akasaki, S. Watanabe, Y. Kaneko, and N. Yamad, J. Cryst. Growth JCRGAE 0022-0248 223, 83 (2001). 10.1016/S0022-0248(00)01017-4
16. J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, G. Simin, and M. Asif Khan, Appl. Phys. Lett. APPLAB 0003-6951 80, 3542 (2002). 10.1063/1.1477620
17. J. -M. Bethoux, P. Venńgùs, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, J. Appl. Phys. JAPIAU 0021-8979 94, 6499 (2003). 10.1063/1.1622993
18. C. J. Collins, T. Li, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, and J. C. Campbell, Appl. Phys. Lett. APPLAB 0003-6951 77, 2810 (2000). 10.1063/1.1322374
19. D. Marx, Z. Kawazu, T. Nakayama, Y. Mihashi, T. Takami, M. Nunoshita, and T. Ozeki, J. Cryst. Growth JCRGAE 0022-0248 189-190, 87 (1998). 10.1016/S0022-0248(98)00178-X
20. S. Donati, Photodetectors: Devices, Circuits, and Applications (Prentice-Hall, New Jersey, 2000).
21. C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, Appl. Phys. Lett. APPLAB 0003-6951 80, 3754 (2002). 10.1063/1.1480484