Trapping effects in Wide-Bandgap microwave FETs

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2002, Pages 1823-1826

  Binari, S C ^a   Klein, P B ^a   Kazior, T E ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; ENERGY GAP; GALLIUM NITRIDE; INTERFACES (MATERIALS); MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON CARBIDE;

CHANNEL MOBILITY; MICROWAVE FIELD EFFECT TRANSISTORS; TRAPPING EFFECTS; WIDE BANDGAP;

FIELD EFFECT TRANSISTORS;

EID: 0036312201     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1012217     Document Type: Article

References (24)

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