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Applied Physics Letters

Volumn 96, Issue 26, 2010, Pages

Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates

(5) Cicek, E a Vashaei, Z a McClintock, R a Bayram, C a Razeghi, M a

a Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE GAINS; BACK-ILLUMINATION; GAN SUBSTRATE; GEIGER MODES; LOW-DISLOCATION DENSITY; MODE OPERATION; REVERSE-BIAS; SAPPHIRE SUBSTRATES; SINGLE-PHOTON DETECTION EFFICIENCIES;

AVALANCHE PHOTODIODES; GALLIUM NITRIDE; GEIGER COUNTERS; PHOTODIODES; SAPPHIRE; SUBSTRATES;

GALLIUM ALLOYS;

EID: 77954326049 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3457783 Document Type: Article

Times cited : (65)

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