An overview of resistive random access memory devices

Chinese Science Bulletin

Volumn 56, Issue 28-29, 2011, Pages 3072-3078

  Li, YingTao ^a,b   Long, ShiBing ^b   Liu, Qi ^b   Lü, HangBing ^b   Liu, Su ^a   Liu, Ming ^b  

^a LANZHOU UNIVERSITY   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

performance parameters; resistive random access memory; resistive switching

Indexed keywords

EID: 80053099608     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1007/s11434-011-4671-0     Document Type: Review

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