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Japanese Journal of Applied Physics

Volumn 48, Issue 6, 2009, Pages

Improved dielectric properties of tetragonal ZrO2 gate dielectric fabricated by ozone-assisted sputtering

(4) Zhou, Ying a Inosaka, Naoya a Sasaki, Kimihiro a Kumeda, Minoru a

a KANAZAWA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE CURVE; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DIELECTRIC CONSTANTS; FLATBAND SHIFT; FREQUENCY DISPERSION; INTERFACIAL PROPERTY; LOW-LEAKAGE CURRENT; PROMISING MATERIALS;

CERAMIC CAPACITORS; ELECTRIC POTENTIAL; EPITAXIAL FILMS; GATE DIELECTRICS; GATES (TRANSISTOR); OZONE; SEMICONDUCTOR GROWTH; ZIRCONIUM ALLOYS;

DIELECTRIC PROPERTIES;

EID: 68649085446 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.060208 Document Type: Article

Times cited : (3)

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