The effect of interfacial layers on high-performance gate dielectrics processed by RTP-ALD

Journal of the Electrochemical Society

Volumn 151, Issue 8, 2004, Pages

  Fakhruddin, Mohammed ^a   Singh, Rajendra ^a   Poole, Kelvin F ^a   Kondapi, Sriram V ^a   Narayan, Jagdish ^b  

^a AMRL   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACIAL LAYERS; PICOAMMETER; PRECURSORS; SHADOW MASKS;

CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; INTERFACES (MATERIALS); SILICA; STRAIN; THERMAL CYCLING; TRANSMISSION ELECTRON MICROSCOPY;

ULTRATHIN FILMS;

EID: 4344581438     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1768132     Document Type: Article

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