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Volumn 96, Issue 24, 2010, Pages

Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal- oxide-semiconductor devices

(3) Zhao, Yi a,b Kita, Koji a Toriumi, Akira a

a UNIVERSITY OF TOKYO (Japan)

b INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GIBBS FREE ENERGY CHANGES; HIGH PERMITTIVITY OXIDES; HIGH-K GATE OXIDE; HIGH-K OXIDES; LANTHANUM OXIDE; METAL OXIDE SEMICONDUCTOR; MOISTURE ABSORPTION; MOISTURE RESISTANCE; RARE EARTH OXIDE; REACTION SPEED; THERMO DYNAMIC ANALYSIS; THERMODYNAMIC DATA; THERMODYNAMIC PROCESS;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); LANTHANUM; MOISTURE; MOS DEVICES; PERMITTIVITY; SEMICONDUCTOR DEVICE MANUFACTURE; THERMOANALYSIS; THERMODYNAMICS; WATER ABSORPTION;

LANTHANUM OXIDES;

EID: 77953805079 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3455110 Document Type: Article

Times cited : (27)

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