Nonvolatile memory with nitrogen-stabilized cubic-phase ZrO2 as charge-trapping layer

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 1008-1010

  Wu, Yung Hsien ^a   Chen, Lun Lun ^a   Wu, Jia Rong ^a   Wu, Min Lin ^a   Lin, Chia Chun ^a   Chang, Chia Hsuan ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Amorphous ZrON; charge trapping layer; nitrogen stabilized cubic ZrO2; nonvolatile memory

Indexed keywords

AMORPHOUS ZRON; CHARGE LOSS; DOUBLE-QUANTUM; FLAT BAND; MEMORY WINDOW; NON-VOLATILE MEMORIES; PROGRAM/ERASE; TRAPPING SITES; VOLTAGE SHIFT;

CHARGE TRAPPING; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NITROGEN; PASSIVATION; ZIRCONIUM ALLOYS;

AMORPHOUS FILMS;

EID: 77956175693     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2055530     Document Type: Article

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