Modeling of damage accumulation during ion implantation into single-crystalline silicon

Journal of the Electrochemical Society

Volumn 144, Issue 4, 1997, Pages 1495-1504

  Posselt, M ^a   Schmidt, B ^a   Murthy, C S ^b   Feudel, T ^c   Suzuki, K ^d  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b IBM   (United States)

^c ETH ZURICH   (Switzerland)

^d FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; COMPUTER SIMULATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON; SINGLE CRYSTALS;

DAMAGE ACCUMULATION MODELING; PHENOMENOLOGICAL MODELS;

ION IMPLANTATION;

EID: 0031118939     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837618     Document Type: Article

References (57)

1. T. Diaz de la Rubia and G. H. Gilmer, Phys. Rev. Lett., 74, 2507 (1995).
2. D. M. Stock, G. H. Gilmer, M. Jaraiz, and T. Diaz de la Rubia, Nucl. Instrum Methods B, 102, 207 (1995).
3. M. Jaraiz, J. Arias, L. A. Bailon, and J. Barbolla, Vacuum, 44, 321 (1993).
4. M. Jaraiz, J. Arias, J. E. Rubio, L. A. Bailon, and J. Barbolla, Nucl. Instrum. Methods B, 80/81, 172 (1993).
5. K. M. Klein, C. Park, and A. F. Tasch, ibid., 59/60, 60 (1991).
6. K. M. Klein, C. Park, and A. F. Tasch, IEEE Trans. Electron Devices, ED-39, 1614 (1992).
7. A. F. Tasch, S. H. Yang, and S. J. Morris, Nucl. Instrum. Methods B, 102, 173 (1995).
8. S. H. Yang, S. J. Morris, S. Tian, K. B. Parab, and A. F. Tasch, IEEE Trans. Semicond. Manuf., SM-9, 49 (1996).
9. S. H. Yang, S. Morris, S. Tian, M. Morris, K. Parab, B. Obradovich, A. F. Tasch, and C. Snell, in Process Physics and Modeling in Semiconductor Technology, G. R. Srinivasan, C. S. Murthy, and S. T. Dunham, Editors, PV 96-4, p. 481, The Electrochemical Society Proceedings Series, Pennington, NJ (1996).
10. M. Posselt, Nucl. Instrum. Methods B, 80/81, 28 (1993).
11. M. Posselt, Mater. Res. Soc. Symp. Proc., 279, 23 (1993).
12. C. S. Murthy and M. Posselt, in Process Physics and Modeling in Semiconductor Technology, G. R. Srinivasan, K. Taniguchi, and C. S. Murthy, Editors, PV 93-6, p. 545, The Electrochemical Society Proceedings Series, Pennington, NJ (1993).
13. M. Posselt, Nucl. Instrum. Methods. B, 90, 373 (1994).
14. M. Posselt, ibid., 96, 163 (1995).
15. M. Posselt, ibid., 102, 167 (1995).
16. M. Posselt, Mater. Res. Soc. Symp. Proc., 389, 227 (1995).
17. A. Simionescu and G. Hobler, in Simulation of Semiconductor Devices and Processes, Vol. 5, S. Selberherr, H. Stippel, and E. Strasser, Editors, p. 361, Springer-Verlag, Wien and New York (1993).
18. G. Hobler, A. Simionescu, L. Palmetshofer, C. Tian, and G. Stingeder, J. Appl. Phys., 77, 3697 (1995).
19. G. Hobler, Nucl. Instrum. Methods B, 96, 155 (1995).
20. G. Hobler, A. Simionescu, L. Palmetshofer, F. Jahnel, R. von Criegern, C. Tian, and G. Stingeder, in Proceedings of the Third International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, J. Ehrstein, R. Mathur, and G. McGuire, Editors, p. 14.1, Research Triangle Park, NC, March 1995.
21. A. Simionescu and G. Hobler, Mater. Res. Soc. Symp. Proc., 389, 221 (1995).
22. A. Simionescu, S. Herzog, G. Hobler, R. Schork, J. Lorenz, C. Tian, and G. Stingeder, Nucl. Instrum. Methods B, 100, 483 (1995).
23. A. Simionescu, G. Hobler, and F. Lau, in Simulation of Semiconductor Devices amd Processes, Vol. 6, H. Ryssel and P. Pichler, Editors, p. 484. Springer-Verlag, Wien and New York (1995).
24. T. Saito, H. Yamakawa, S. Komiya, H. J. Kang, and R. Shimizu, Nucl. Instrum. Methods B, 21, 456 (1987).
25. H. J. Kang, R. Shimizu, T. Saito, and H. Yamakawa, J. Appl. Phys., 62, 2733 (1987).
26. T. L. Crandle and B. J. Mulvaney, IEEE Electron. Device Lett., EDL-11, 42 (1990).
27. M. Hane and M. Fukuma, IEEE Trans. Electron Devices, ED-37, 1959 (1990).
28. M. Hane and H. Matsumoto, ibid., ED-40, 1215 (1993).
29. M. Son, H. Park, and H. Hwang, in Simulation of Semiconductor Devices and Processes, Vol. 6, H. Ryssel and P. Pichler, Editors, p. 214, Springer-Verlag, Wien (1995).
30. M. Son, J. Lee, K. Byun, and H. Hwang, in Process Physics and Modeling in Semiconductor Technology, G. R. Srinivasan, C. S. Murthy, and S. T. Dunham, Editors, PV 96-4, p. 496, The Electrochemical Society Proceedings Series, Pennington, NJ (1996).
31. M. T. Robinson, in Nuclear Fission Reactors, p. 364, The British Nuclear Energy Society, London (1970).
32. P. Sigmund, Radiat. Eff., 1, 15 (1969).
33. N. Hecking, K. F. Heidemann, and E. te Kaat, Nucl. Instrum. Methods B, 15, 760 (1986).
34. V. Raineri, R. Setola, F. Priolo, E. Rimini, and G. Galvagno, Phys. Rev. B, 44, 10568 (1991).
35. M. Posselt, Unpublished work.
36. R. G. Wilson, J. Appl. Phys., 60, 2797 (1996).
37. H. Schober, Phys. Rev. B, 39, 13013 (1989).
38. V. Konoplev and K. H. Heinig, Appl. Phys. Lett., In press.
39. Jing Zhu, L. H. Yang, C. Mailhiot, and T. Diaz de la Rubia, Nucl. Instrum. Methods B, 102, 29 (1995).
40. T. Diaz de la Rubia and M. J. Caturla, Private communication.
41. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping end Range of Ions in Solids, Pergamon Press, New York (1985).
42. A. F. Tasch, H. Shin, C. Park, J. Alvis, and S. Novak, This Journal, 136, 810 (1989).
43. P. Gupta, C. Park, K. M. Klein, S. H. Yang, S. J. Morris, V. Do, and A. F. Tasch, Mater. Res. Soc. Symp. Proc., 235, 203 (1992).
44. A. F. Tasch, S. H. Yang, S. J. Morris, and D. Lim, J. Vac. Sci. Technol., B12, 166 (1994).
45. R. J. Schreutelkamp, F. W. Saris, J. F. M. Westendorp, R. E. Kaim, G. B. Odlum, and K. T. F. Janssen, Mater. Sci. Eng., B2, 139 (1989).
46. R. J. Schreutelkamp, V. Raineri, F. W. Saris, R. E. Kaim, J. F. M. Westendorp, P. F. H. M. van der Meulen, and K. T. F. Janssen, Nucl. Instrum. Methods B, 55, 615 (1991).
47. F. F. Morehead and B. L. Crowder, Radiat. Eff., 6, 27 (1970).
48. L. A. Christel, J. F. Gibbons, and T. W. Sigmon, J. Appl. Phys., 52, 7143 (1981).
49. A. J. Walker, P. H. Woerlee, H. G. Pomp, and N. E. B. Cowern, ibid., 73, 4048 (1993).
50. M. Delfino and J. M. Deblasi, IEEE Electron. Device Lett., EDL-6, 338 (1985).
51. H. Cerva and G. Hobler, This Journal, 139, 3631 (1992).
52. G. Carter and W. A. Grant, Ion Implantation of Semiconductors, Edward Arnold, London (1976).
53. H. J. Stein, F. L. Vook, D. K. Brice, J. A. Borders, and S. T. Picraux, in Proceedings of the First International Conference on Ion Implantation, L. T. Chadderton and F. H. Eisen, Editors, p. 17, Gordon and Breach, London (1971).
54. A. Claverie, C. Vieu, J. Faure, and J. Beauvillain, Mater. Sci. Eng., B2, 49 (1989).
55. A. Claverie, A. Roumili, N. Gessinn, and J. Beauvillain, ibid., B4, 205 (1989).
56. A. Claverie, C. Vieu, J. Faure, and J. Beauvillain, J. Appl. Phys., 64, 4415 (1988).
57. W. P. Maszara and G. A. Rozgonyi, ibid., 60, 2310 (1986).