Improved atomistic damage generation model for binary collision simulations

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Santos, Iván ^a   Marqús, Luis A ^a   Pelaz, Lourdes ^a   López, Pedro ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LEVELS; BINARY COLLISION SIMULATIONS; BINARY COLLISIONS; CLASSICAL MOLECULAR DYNAMICS; COMPUTATIONAL GAINS; DAMAGE MODELS; MOLECULAR IMPLANTS; NON-LINEAR EFFECTS; PROCESS SIMULATORS; THERMAL REGIMES;

ION BOMBARDMENT; ION IMPLANTATION; MOLECULAR DYNAMICS; PLASMAS;

DYNAMICS;

EID: 65449163744     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3110077     Document Type: Article

References (60)

1. International Technology Roadmap for Semiconductors, http://public.itrs. net.
2. M. Y. Tsai and B. G. Streetman, J. Appl. Phys. 0021-8979 10.1063/1.325688 50, 183 (1979).
3. R. Lindsay, R. Surdeanu, H. Lendzian, and K. Maex, Fourth International Workshop on Junction Technology (IWJT), 2004 (unpublished).
4. T. Aoyama, K. Suzuki, H. Tashiro, Y. Toda, T. Yamazaki, K. Tasaki, and T. Ito, J. Appl. Phys. 0021-8979 10.1063/1.359343 77, 417 (1995).
5. K. Goto, J. Matsuo, T. Sugii, H. Minakato, U. Yamada, and T. Hisatsugu, Technical Digest of International Electron Device Meeting, San Francisco, CA (IEEE, San Francisco, CA, 1996), p. 435.
6. D. Jacobson, T. Horsky, W. Krull, and B. Milgate, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/j.nimb.2005.05.025 237, 406 (2005).
7. M. Aboy, L. Pelaz, P. Lopez, L. A. Marqús, R. Duffy, and V. C. Venezia, Appl. Phys. Lett. 0003-6951 10.1063/1.2203334 88, 191917 (2006).
8. M. T. Robinson and I. M. Torrens, Phys. Rev. B 0556-2805 10.1103/PhysRevB.9.5008 9, 5008 (1974).
9. UT-MARLOWE, http://homer.mer.utexas.edu.
10. J. F. Ziegler, The Stopping and Range of Ions in Solids (Pergamon, New York, 1977), Vol. 1.
11. SRIM documentation, www.srim.org.
12. J. M. Hernández-Mangas, J. Arias, L. Bailón, M. Jaraíz, and J. Barbolla, J. Appl. Phys. 0021-8979 10.1063/1.1424052 91, 658 (2002).
13. G. Hobler, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/0168-583X(94)00476-5 96, 155 (1995).
14. J. M. Haile, Molecular Dynamics Simulations: Elementary Methods (Wiley, New York, 1992).
15. P. Sigmund, Appl. Phys. Lett. 0003-6951 10.1063/1.1652730 14, 114 (1969).
16. M. J. Norgett, M. T. Robinson, and I. M. Torrens, Nucl. Eng. Des. 0029-5493 10.1016/0029-5493(75)90035-7 33, 50 (1975).
17. See, for example, description of the "Kinchin-Pease damage model" of UT-MARLOWE, http://homer.mer.utexas.edu.
18. J. J. Loferski and P. Rappaport, Phys. Rev. 98, 1861 (1955). 0031-899X
19. M. Sayed, J. H. Jefferson, A. B. Walker, and A. G. Cullis, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/0168-583X(94)00767-5 102, 232 (1995).
20. L. A. Miller, D. K. Brice, A. K. Prinja, and S. T. Picraux, Phys. Rev. B 0163-1829 10.1103/PhysRevB.49.16953 49, 16953 (1994).
21. M. Mazzarolo, L. Colombo, G. Lulli, and E. Albertazzi, Phys. Rev. B 0163-1829 10.1103/PhysRevB.63.195207 63, 195207 (2001).
22. E. Holmstrom, A. Kuronen, and K. Nordlund, Phys. Rev. B 0163-1829 10.1103/PhysRevB.78.045202 78, 045202 (2008).
23. M. J. Caturla, T. D. de la Rubia, L. A. Marqús, and G. H. Gilmer, Phys. Rev. B 0163-1829 10.1103/PhysRevB.54.16683 54, 16683 (1996).
24. S. E. Donnelly, R. C. Birtcher, V. M. Visnyakov, and G. Carter, Appl. Phys. Lett. 0003-6951 10.1063/1.1562336 82, 1860 (2003).
25. T. Diaz de la Rubia and G. H. Gilmer, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.74.2507 74, 2507 (1995).
26. K. Nordlund, M. Ghaly, R. Averback, M. Caturla, T. Diaz de la Rubia, and J. Tarus, Phys. Rev. B 0163-1829 10.1103/PhysRevB.57.7556 57, 7556 (1998).
27. S. Ihara, S. Itoh, and J. Kitakami, Phys. Rev. B 0163-1829 10.1103/PhysRevB.58.10736 58, 10736 (1998).
28. G. Hobler, G. Otto, D. Kovač, L. Palmetshofer, K. Mayerhofer, and K. Piplits, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/j.nimb.2004. 10.070 228, 360 (2005).
29. See, for example, description of the "kinetic adaptive damage model" of UT-MARLOWE, http://homer.mer.utexas.edu.
30. M. Aboy, L. Pelaz, L. A. Marqús, P. López, J. Barbolla, and R. Duffy, J. Appl. Phys. 0021-8979 10.1063/1.1904159 97, 103520 (2005).
31. M. Aboy, L. Pelaz, L. A. Marqús, P. López, J. Barbolla, R. Duffy, V. C. Venezia, and P. B. Griffin, Appl. Phys. Lett. 0003-6951 10.1063/1.1852728 86, 031908 (2005).
32. P. López, L. Pelaz, L. A. Marqús, and I. Santos, J. Appl. Phys. 0021-8979 10.1063/1.2729468 101, 093518 (2007).
33. R. Smith, D. E. Harrison, and B. J. Garrison, Phys. Rev. B 0163-1829 10.1103/PhysRevB.40.93 40, 93 (1989).
34. H. Zhu, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/0168-583X(88)90578-2 83, 334 (1993).
35. K. Beardmore and N. Grønbech-Jesen, Phys. Rev. E 1063-651X 10.1103/PhysRevE.57.7278 57, 7278 (1998).
36. K. Nordlund, Comput. Mater. Sci. 0927-0256 10.1016/0927-0256(94)00085-Q 3, 448 (1995).
37. M. Jaraíz, G. H. Gilmer, D. M. Stock, and T. Diaz de la Rubia, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/0168-583X(94)00793-4 102, 180 (1995).
38. M. Posselt, Mater. Sci. Semicond. Process. 3, 317 (2000). 1369-8001
39. L. A. Marqús, J. E. Rubio, M. Jaraíz, J. Arias, L. Pelaz, and J. Barbolla, Ion Implantation Technology-94, Catania, Italy, 1994 (unpublished).
40. G. Hobler and G. Otto, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/S0168-583X(03)00682-7 206, 81 (2003).
41. M. Posselt, Mater. Res. Soc. Symp. Proc. 647, O2.1 (2001). 0163-1829
42. I. Santos, L. A. Marqús, and L. Pelaz, Phys. Rev. B 0163-1829 10.1103/PhysRevB.74.174115 74, 174115 (2006).
43. M. J. Beck, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.100.185502 100, 185502 (2008).
44. F. Seitz and J. S. Koehler, in Solid State Physics: Advances in Research and Applications, edited by, F. Seitz, and, D. Turnbull, (Academic, New York, 1956), Vol. 2, p. 305.
45. J. Tersoff, Phys. Rev. B 0163-1829 10.1103/PhysRevB.38.9902 38, 9902 (1988).
46. L. A. Marqús, L. Pelaz, M. Aboy, and J. Barbolla, Nucl. Instrum. Methods Phys. Res. B 0168-583X 10.1016/j.nimb.2003.11.020 216, 57 (2004).
47. M. Ishimaru, S. Munetoh, and T. Motooka, Phys. Rev. B 0163-1829 10.1103/PhysRevB.56.15133 56, 15133 (1997).
48. J. K. Bording and J. Taftø, Phys. Rev. B 0163-1829 10.1103/PhysRevB.62.8098 62, 8098 (2000).
49. M. Ishimaru, S. Munetoh, T. Motooka, K. Moriguchi, and A. Shintani, Phys. Rev. B 0163-1829 10.1103/PhysRevB.58.12583 58, 12583 (1998).
50. K. Nordlund and R. Averback, Phys. Rev. B 0163-1829 10.1103/PhysRevB.56. 2421 56, 2421 (1997).
51. K. M. Beardmore and N. Grønbech-Jensen, Phys. Rev. B 0163-1829 10.1103/PhysRevB.60.12610 60, 12610 (1999).
52. M. Koster and H. Urbassek, Phys. Rev. B 0163-1829 10.1103/PhysRevB.62. 11219 62, 11219 (2000).
53. J. W. Mayer and S. S. Lau, Electronics Materials Science for Integrated Circuits in Si and GaAs (MacMillan, New York, 1990).
54. L. A. Marqús, L. Pelaz, P. Castrillo, and J. Barbolla, Phys. Rev. B 0163-1829 10.1103/PhysRevB.71.085204 71, 085204 (2005).
55. L. A. Marqús, M. Caturla, T. Diaz de la Rubia, and G. Gilmer, J. Appl. Phys. 0021-8979 10.1063/1.363690 80, 6160 (1996).
56. In the MD simulations presented in Sec., we have found that, for the energy deposition conditions found in implantation cascades, disordered atoms are not further than the second neighbor distance with respect to the border of the sphere of the initial moving atoms. This limit can be taken as the influence distance of multiple-interactions for damage generation at this energy regime.
57. I. Santos, L. A. Marqús, L. Pelaz, P. López, M. Aboy, and J. Barbolla, Mater. Sci. Eng., B 124-125, 372 (2005). 0921-5107
58. L. Pelaz, L. A. Marqús, and J. Barbolla, J. Appl. Phys. 0021-8979 10.1063/1.1808484 96, 5947 (2004).
59. L. A. Marqús, L. Pelaz, M. Aboy, L. Enríquez, and J. Barbolla, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.91.135504 91, 135504 (2003).
60. L. A. Marqús, L. Pelaz, I. Santos, and V. C. Venezia, Phys. Rev. B 0163-1829 10.1103/PhysRevB.74.201201 74, 201201 (2006).