Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films

Journal of Alloys and Compounds

Volumn 509, Issue 36, 2011, Pages 8922-8926

  Erdogan, N H ^a   Kara, K ^a   Ozdamar, H ^a   Kavak, H ^a   Esen, R ^a   Karaagac, H ^b  

^a CUKUROVA UNIVERSITY   (Turkey)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Crystal structure; Oxidation; Semiconductors; Thin films; X ray diffraction

Indexed keywords

AIR ATMOSPHERE; DEEP LEVEL EMISSION; FILTERED CATHODIC VACUUM ARC; FILTERED CATHODIC VACUUM ARC DEPOSITION; GLASS SUBSTRATES; N-DOPED; OPTICAL AND ELECTRICAL PROPERTIES; OXIDATION TEMPERATURE; OXIDIZED FILMS; P-TYPE CONDUCTION; POLYCRYSTALLINE; PREFERENTIAL ORIENTATION; ROOM-TEMPERATURE PHOTOLUMINESCENCE; STRUCTURAL AND OPTICAL PROPERTIES; THERMAL OXIDATION; ULTRA-VIOLET; ZNO; ZNO FILMS; ZNO THIN FILM;

AMORPHOUS MATERIALS; CRYSTAL STRUCTURE; DEPOSITION; DIFFRACTION; ELECTRIC PROPERTIES; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HOLE CONCENTRATION; METALLIC FILMS; NITROGEN PLASMA; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOELECTRON SPECTROSCOPY; PLASMA DEPOSITION; SUBSTRATES; THIN FILMS; VACUUM; VACUUM APPLICATIONS; VACUUM TECHNOLOGY; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

OXIDATION;

EID: 80051786722     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.06.048     Document Type: Article

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