Optical and electrical properties of zinc oxide thin films with low resistivity via Li-N dual-acceptor doping

Journal of Alloys and Compounds

Volumn 509, Issue 20, 2011, Pages 5962-5968

  Zhang, Daoli ^a,b   Zhang, Jianbing ^a,b   Guo, Zhe ^a   Miao, Xiangshui ^a,b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Electronic properties; Li N dual acceptor doping; Successive ionic layer adsorption and reaction; Ultraviolet emission; Zinc oxide thin films

Indexed keywords

ACCEPTOR DOPING; C-AXIS ORIENTATIONS; CRYSTALLINITIES; DOPING LEVELS; FLUORESCENCE SPECTROPHOTOMETRY; GLASS SUBSTRATES; HIGH TRANSMITTANCE; LI-N DUAL-ACCEPTOR DOPING; LOW RESISTIVITY; OPTICAL AND ELECTRICAL PROPERTIES; SEM; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; ULTRAVIOLET EMISSION; ULTRAVIOLET-VISIBLE SPECTROPHOTOMETRY; VISIBLE RANGE; ZINC OXIDE THIN FILMS;

ADSORPTION; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SPECTROPHOTOMETRY; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 79954415617     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.03.028     Document Type: Article

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