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Physica B: Condensed Matter

Volumn 406, Issue 8, 2011, Pages 1533-1535

Structural, optical and electronic properties of P doped p-type ZnO thin film

(3) Su, S C a Yang, X D a Hu, C D a

a SOUTH CHINA NORMAL UNIVERSITY (China)

Author keywords

P doped; Photoluminescence; ZnO

Indexed keywords

ACCEPTOR COMPLEX; AS-GROWN; MAGNETRON SPUTTERING METHOD; MIXING GAS; N-TYPE CONDUCTIVITY; NEUTRAL ACCEPTORS; OPTICAL AND ELECTRONIC PROPERTIES; P DOPED; P TYPE ZNO THIN FILM; P-DOPED ZNO; P-TYPE; P-TYPE CONDUCTIVITY; RADIATIVE TRANSITIONS; RADIO FREQUENCIES; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; XPS; XRD MEASUREMENTS; ZNO;

ANNEALING; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; MAGNETRON SPUTTERING; METALLIC FILMS; PHOSPHORUS; PHOTOLUMINESCENCE; QUARTZ; ZINC;

ZINC OXIDE;

EID: 79952448441 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2011.01.063 Document Type: Article

Times cited : (23)

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