Thermal oxidation of n-type ZnN films made by r f-sputtering from a zinc nitride target, and their conversion into p-type films

Superlattices and Microstructures

Volumn 42, Issue 1-6, 2007, Pages 55-61

  Kambilafka, V ^a   Voulgaropoulou, P ^a   Dounis, S ^a   Iliopoulos, E ^b   Androulidaki, M ^b   Saly V ^c   Ruzinsky M ^c   Aperathitis, E ^b  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; PLASMAS; THERMOOXIDATION; ZINC OXIDE;

EXCITON EMISSIONS; THERMAL OXIDATION; TRANSMITTANCE;

THIN FILMS;

EID: 34548497429     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.04.038     Document Type: Article

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