Nitrogen-doped ZnO prepared by capillaritron reactive ion beam sputtering deposition

Applied Surface Science

Volumn 256, Issue 13, 2010, Pages 4153-4156

  Chao, Liang Chiun ^a   Shih, Yu Ren ^a   Li, Yao Kai ^a   Chen, Jun Wei ^a   Wu, Jiun De ^a   Ho, Ching Hwa ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Nitrogen; Raman scattering; ZnO

Indexed keywords

ANNEALING; DOPING (ADDITIVES); FILM PREPARATION; GRAIN GROWTH; II-VI SEMICONDUCTORS; ION SOURCES; NITROGEN; RAMAN SCATTERING; SPUTTERING; SURFACE ROUGHNESS; THIN FILMS; VIBRATION ANALYSIS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

AS-DEPOSITED FILMS; CRYSTALLINE QUALITY; DIFFRACTION PEAKS; LOCAL VIBRATION MODES; MICRO RAMAN SPECTROSCOPY; NITROGEN CONCENTRATIONS; POSTGROWTH ANNEALING; REACTIVE ION BEAM SPUTTERING;

ION BEAMS;

EID: 77950521144     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.02.001     Document Type: Article

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