p-Type conduction in phosphorus-doped ZnO thin films by MOCVD and thermal activation of the dopant

Applied Surface Science

Volumn 252, Issue 22, 2006, Pages 7953-7956

  Miao, Yan ^a   Ye, Zhizhen ^a   Xu, Weizhong ^a   Chen, Fugang ^a   Zhou, Xincui ^a   Zhao, Binghui ^a   Zhu, Liping ^a   Lu, Jianguo ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Doping; Metalorganic chemical vapor deposition; p Type conduction; Semiconducting II VI materials; Zinc compounds

Indexed keywords

ANNEALING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; ZINC OXIDE;

P-TYPE CONDUCTION; SEMICONDUCTING II-VI MATERIALS; THERMAL ACTIVATION;

THIN FILMS;

EID: 33747890460     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.10.001     Document Type: Article

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