Microstructure and optical properties of N-incorporated polycrystalline ZnO films

Journal of Alloys and Compounds

Volumn 478, Issue 1-2, 2009, Pages 507-512

  Wang, X C ^a   Mi, W B ^b   Dong, S ^b   Chen, X M ^a   Yang, B H ^a  

^a TIANJIN UNIVERSITY OF TECHNOLOGY   (China)

^b Institute of Advanced Materials Physics   (China)

Author keywords

Crystal structure and symmetry; Semiconductors; Thin films; X ray diffraction

Indexed keywords

ANTI-SITE DEFECTS; CONDUCTION BAND EDGES; CRYSTAL STRUCTURE AND SYMMETRY; DIFFRACTION PEAKS; GRAIN SIZES; LATTICE PLANES; N INCORPORATIONS; NITROGEN FLOW RATES; PHOTOLUMINESCENCE PEAKS; POLYCRYSTALLINE ZNO; RF- MAGNETRON SPUTTERING; SEMICONDUCTORS; ZNO; ZNO FILMS;

CRYSTALS; DIFFRACTION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HETEROJUNCTIONS; MAGNETRON SPUTTERING; METALLIC FILMS; NITRIDES; OPTICAL PROPERTIES; OXYGEN; OXYGEN VACANCIES; SEMICONDUCTING ZINC COMPOUNDS; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

CRYSTAL SYMMETRY;

EID: 67349177187     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.11.075     Document Type: Article

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