Influence of deposition temperature on the crystallinity of Al-doped ZnO thin films at glass substrates prepared by RF magnetron sputtering method

Superlattices and Microstructures

Volumn 49, Issue 6, 2011, Pages 644-653

  Zhang, Zhiyun ^a   Bao, Chonggao ^a   Yao, Wenjing ^a   Ma, Shengqiang ^a   Zhang, Lili ^a   Hou, Shuzeng ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

Al doped ZnO; Atomic arrangement; Defect density; RF magnetron sputtering; Substrate temperature; Transmission electron microscopy

Indexed keywords

AL-DOPED ZNO; ATOMIC ARRANGEMENT; AZO FILMS; CRYSTALLINITIES; DEPOSITION TEMPERATURES; DIFFERENT SUBSTRATES; ELECTRICAL AND OPTICAL PROPERTIES; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GLASS SUBSTRATES; HALL MEASUREMENTS; HEXAGONAL WURTZITE STRUCTURE; LOW RESISTANCE; LOW TEMPERATURES; MICRO-STRUCTURAL; POLYCRYSTALLINE THIN FILM; PREFERRED ORIENTATIONS; RF MAGNETRON SPUTTERING METHOD; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SELECTED AREA ELECTRON DIFFRACTION; SUBSTRATE TEMPERATURE; TEMPERATURE RANGE; TRANSPARENT CONDUCTING FILMS; UV-VISIBLE; VISIBLE RANGE; WURTZITE STRUCTURE;

ALUMINUM; CONDUCTIVE FILMS; DEFECT DENSITY; DEFECTS; DEPOSITION; DIFFRACTION; ELECTRIC PROPERTIES; ELECTRONS; FILM PREPARATION; GLASS; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

OPTICAL FILMS;

EID: 79956104759     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2011.04.002     Document Type: Article

References (31)

1. M.T. Elm, T. Henning, P.J. Klar, and B. Szyszka Effects of artificially structured micrometer holes on the transport behavior of Al-doped ZnO layers Appl. Phys. Lett. 93 2008 232101
2. K. Jung, W.K. Choi, S.J. Yoon, H.J. Kim, and J.W. Choi Electrical and optical properties of Ga doped zinc oxide thin films deposited at room temperature by continuous composition spread Appl. Surf. Sci. 256 2010 6219 6223
3. L. Gong, Z.Z. Ye, J.G. Lu, L.P. Zhu, J.Y. Huang, X.Q. Gu, and B.H. Zhao Highly transparent conductive and near-infrared reflective ZnO:Al thin films Vacuum 84 2010 947 952
4. C. Guillen, and J. Herrero Optical, electrical and structural characteristics of Al:ZnO thin films with various thicknesses deposited by DC sputtering at room temperature and annealed in air or vacuum Vacuum 84 2010 924 929
5. Y.J. Lin Comment on "Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft X-ray photoemission spectroscopy" Appl. Phys. Lett. 86 2005 042104
6. Appl. Phys. Lett. 86 2005 216101
7. D.C. Look, K.D. Leedy, D.H. Tomich, and B. Bayraktaroglu Mobility analysis of highly conducting thin films: application to ZnO Appl. Phys. Lett. 96 2010 062102
8. D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Eason, and G. Cantwell Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy Appl. Phys. Lett. 81 2002 1830 1832
9. A.X. Lu, J. Sun, J. Jiang, and Q. Wan Low-voltage transparent electric-double-layer ZnO-based thin-film transistors for portable transparent electronics Appl. Phys. Lett. 96 2010 043114
10. J.G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, and T. Ohshima Carrier concentration induced band-gap shift in Al-doped Zn1-xMgxO thin films Appl. Phys. Lett. 89 2006 262107
11. M. Brandt, H. von Wenckstern, G. Benndorf, M. Lange, C.P. Dietrich, C. Kranert, C. Sturm, R. Schmidt-Grund, H. Hochmuth, M. Lorenz, M. Grundmann, M.R. Wagner, M. Alic, C. Nenstiel, and A. Hoffmann Identification of a donor-related recombination channel in ZnO thin films Phys. Rev. B: Condens. Matter 81 2010 073306
12. H. Bo, M.Z. Quan, X. Jing, Z. Lei, Z.N. Sheng, L. Feng, S. Cheng, S. Ling, M.X. Jie, Z.C. Yue, Y.Z. Shan, and Y.Y. Ting Realization and characterization of an ITO/AZO/SiO2/p-Si SIS heterojunction Superlattices Microstruct. 46 2009 664 671
13. I.A. Buyanova, X.J. Wang, W.M. Wang, C.W. Tu, and W.M. Chen Effects of Ga doping on optical and structural properties of ZnO epilayers Superlattices Microstruct. 45 2009 413 420
14. H.Y. Lee, Y.H. Chou, C.T. Lee, W.Y. Yeh, and M.T. Chu Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes J. Appl. Phys. 107 2010 014503
15. Y.S. Kim, and W.P. Tai Electrical and optical properties of Al-doped ZnO thin films by sol-gel process Appl. Surf. Sci. 253 2007 4911 4916
16. Y.H. Kim, K.S. Lee, T.S. Lee, B. Cheong, T.Y. Seong, and W.M. Kim Effects of substrate temperature and Zn addition on the properties of Al-doped ZnO films prepared by magnetron sputtering Appl. Surf. Sci. 255 2009 7251 7256
17. T. Miyata, Y. Minamino, S. Ida, and T. Minami Highly transparent and conductive ZnO:Al thin films prepared by vacuum arc plasma evaporation J. Vac. Sci. Technol. A 22 2004 1711 1715
18. Q.J. Yu, H.B. Yang, W.Y. Fu, L.X. Chang, J. Xu, C.L. Yu, R.H. Wei, K. Du, H.Y. Zhu, M.H. Li, and G.T. Zou Transparent conducting yttrium-doped ZnO thin films deposited by sol-gel method Thin Solid Films 515 2007 3840 3843 (Pubitemid 46240181)
19. A. Verma, F. Khan, D. Kumar, M. Kar, B.C. Chakravarty, S.N. Singh, and M. Husain Sol-gel derived aluminum doped zinc oxide for application as anti-reflection coating in terrestrial silicon solar cells Thin Solid Films 518 2010 2649 2653
20. F. Yakuphanoglu, S. Ilican, M. Caglar, and Y. Caglar Microstructure and electro-optical properties of sol-gel derived Cd-doped ZnO films Superlattices Microstruct. 47 2010 732 743
21. K. Matsubara, H. Tampo, H. Shibata, A. Yamada, P. Fons, K. Iwata, and S. Niki Band-gap modified Al-doped Zn1-xMgxO transparent conducting films deposited by pulsed laser deposition Appl. Phys. Lett. 85 2004 1374 1376
22. B. Houng, C.S. Hsi, B.Y. Hou, and S.L. Fu Effect of process parameters on the growth and properties of impurity-doped zinc oxide transparent conducting thin films by RF magnetron sputtering Vacuum 83 2008 534 539
23. D.Y. Chen, and C.Y. Hsu Growth of Ga-doped ZnO films with ZnO buffer layer by sputtering at room temperature Superlattices Microstruct. 44 2008 742 753
24. H.X. Chen, J.J. Ding, X.G. Zhao, and S.Y. Ma Microstructure and optical properties of ZnO:Al films prepared by radio frequency reactive magnetron sputtering Phys. B 405 2010 1339 1344
25. B. Houng, C. Hsi, B. Hou, and S. Fu Effect of process parameters on the growth and properties of impurity-doped zinc oxide transparent conducting thin films by RF magnetron sputtering Vacuum 83 2008 534 539
26. Q.B. Ma, Z.Z. Ye, H.P. He, J.R. Wang, L.P. Zhu, and B.H. Zhao Substrate temperature dependence of the properties of Ga-doped ZnO films deposited by DC reactive magnetron sputtering Vacuum 82 2007 9 14
27. J.L. Chen, D. Chen, J.J. He, S.Y. Zhang, and Z.H. Chen The microstructure, optical, and electrical properties of sol-gel-derived Sc-doped and Al-Sc co-doped ZnO thin films Appl. Surf. Sci. 255 2009 9413 9419
28. Y.J. Park, H.N. Kim, and H.H. Shin Effects of deposition temperature on the crystallinity of Ga-doped ZnO thin films on glass substrates prepared by sputtering method Appl. Surf. Sci. 255 2009 7532 7536
29. S.G. Gilliland, J.A. Sans, J.F. Sanchez-Royo, G. Almonacid, and A. Segura Charge-transfer absorption band in Zn1-xMxO (M: Co, Mn) investigated by means of photoconductivity, Ga doping, and optical measurements under pressure Appl. Phys. Lett. 96 2010 241902
30. V. Bhosle, and J. Narayan Observation of room temperature ferromagnetism in Ga:ZnO: a transition metal free transparent ferromagnetic conductor Appl. Phys. Lett. 93 2008 021912
31. S. Cornelius, M. Vinnichenko, N. Shevchenko, A. Rogozin, A. Kolitsch, and W. Moller Achieving high free electron mobility in ZnO:Al thin films grown by reactive pulsed magnetron sputtering Appl. Phys. Lett. 94 2009 042103