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Volumn 310, Issue 23, 2008, Pages 5011-5015
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Effects of N doping on ZnO thin films grown by MOVPE
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a
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Author keywords
A1. Doping; A3. Metalorganic vapor phase epitaxy; B1. Oxides; B1. Zinc compounds; B2. Semiconducting II VI materials
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Indexed keywords
ANNEALING;
BIOACTIVITY;
CARRIER CONCENTRATION;
CIVIL AVIATION;
CONCENTRATION (PROCESS);
CONDUCTIVE FILMS;
CORUNDUM;
CRYSTAL GROWTH;
LIGHT EMISSION;
LIGHT SOURCES;
LUMINESCENCE;
METALLIC FILMS;
OPTICAL FILMS;
ORGANOMETALLICS;
OXIDE FILMS;
RAPID THERMAL ANNEALING;
RAPID THERMAL PROCESSING;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR GROWTH;
SOLIDS;
THICK FILMS;
THIN FILMS;
TRANSITION METAL COMPOUNDS;
VAPORS;
ZINC;
ZINC ALLOYS;
ZINC COMPOUNDS;
ZINC OXIDE;
A1. DOPING;
A3. METALORGANIC VAPOR PHASE EPITAXY;
B1. OXIDES;
B1. ZINC COMPOUNDS;
B2. SEMICONDUCTING II-VI MATERIALS;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 56549107684
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.07.124 Document Type: Article |
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Times cited : (6)
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References (19)
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