Nitriding of silicon by using an electron cyclotron resonance nitrogen plasma

Surface and Coatings Technology

Volumn 108-109, Issue , 1998, Pages 312-316

  Hino, T ^a   Harada, M ^a   Yamauchi, Y ^a   Hirohata, Y ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Atomic composition; Chemical binding state; dc bias voltage; Discharge pressure; ECR nitrogen plasma; Nitriding; Silicon; Silicon nitride; Substrate temperature

Indexed keywords

CHEMICAL ACTIVATION; CHEMICAL BONDS; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; ION IMPLANTATION; NITRIDING; NITROGEN; PLASMA APPLICATIONS; PRESSURE EFFECTS; SILICON NITRIDE; SUBSTRATES; THERMAL EFFECTS;

DISCHARGE PRESSURE;

CERAMIC COATINGS;

EID: 0032183679     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(98)00687-2     Document Type: Article

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