Properties of low-k copper barrier SiOCH film deposited by PECVD using hexamethyldisiloxane and N2O

Journal of the Electrochemical Society

Volumn 150, Issue 5, 2003, Pages

  Ishimaru, Tomomi ^a   Shioya, Yoshimi ^b   Ikakura, Hiroshi ^a   Nozawa, Mamoru ^a   Ohgawara, Shoji ^a   Ohdaira, Toshiyuki ^c   Suzuki, Ryoichi ^c   Maeda, Kazuo ^b  

^a CANON INC   (Japan)

^b Semiconductor Process Laboratory   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; IONS; LEAKAGE CURRENTS; NITROGEN OXIDES; OXYGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SILICON COMPOUNDS; SILICON NITRIDE; THERMAL DIFFUSION; WATER;

BARRIER SILICON CARBIDE FILM; COPPER THERMAL DIFFUSION; HEXAMETHYLDISILOXANE;

DIELECTRIC FILMS;

EID: 0037502858     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1562600     Document Type: Article

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