-
1
-
-
0037048712
-
-
D. T. Mitchell, S. B. Lee, L. Trofin, N. C. Li, T. K. Nevanen, H. Soderlund, C. R. Martin, J. Am. Chem. Soc. 2002, 124, 11864-11865.
-
(2002)
J. Am. Chem. Soc
, vol.124
, pp. 11864-11865
-
-
Mitchell, D.T.1
Lee, S.B.2
Trofin, L.3
Li, N.C.4
Nevanen, T.K.5
Soderlund, H.6
Martin, C.R.7
-
5
-
-
36249028183
-
-
d) M. Knez, L. Niinistö, K. Nielsch, Adv. Mater. 2007, 19, 3425-3438.
-
(2007)
Adv. Mater
, vol.19
, pp. 3425-3438
-
-
Knez, M.1
Niinistö, L.2
Nielsch, K.3
-
6
-
-
0031465733
-
-
a) J. W. Klaus, O. Sneh, S. M. George, Science 1997, 278, 1934-1936;
-
(1997)
Science
, vol.278
, pp. 1934-1936
-
-
Klaus, J.W.1
Sneh, O.2
George, S.M.3
-
8
-
-
4344702865
-
-
J. D. Ferguson, E. R. Smith, A. W. Weimer, S. M. George, J. Electrochem. Soc. 2004, 151, G528-G535.
-
(2004)
J. Electrochem. Soc
, vol.151
-
-
Ferguson, J.D.1
Smith, E.R.2
Weimer, A.W.3
George, S.M.4
-
9
-
-
0028517324
-
-
W. Gasser, Y. Uchida, M. Matsumura, Thin Solid Films 1994, 250, 213-218.
-
(1994)
Thin Solid Films
, vol.250
, pp. 213-218
-
-
Gasser, W.1
Uchida, Y.2
Matsumura, M.3
-
11
-
-
0037064190
-
-
b) D. Hausmann, J. Becker, S. Wang, R. G. Gordon, Science 2002, 298, 402-406;
-
(2002)
Science
, vol.298
, pp. 402-406
-
-
Hausmann, D.1
Becker, J.2
Wang, S.3
Gordon, R.G.4
-
12
-
-
0034646723
-
-
c) M. Ritala, K. Kukli, A. Rahtu, P. I. Räisänen, M. Leskelä, T. Sajavaara, J. Keinonen, Science 2000, 288, 319-321.
-
(2000)
Science
, vol.288
, pp. 319-321
-
-
Ritala, M.1
Kukli, K.2
Rahtu, A.3
Räisänen, P.I.4
Leskelä, M.5
Sajavaara, T.6
Keinonen, J.7
-
13
-
-
53549096949
-
-
In contrast, for most other gas-solid deposition techniques, for example chemical vapor deposition (CVD, pulsed-laser deposition (PLD, molecular beam epitaxy (MBE, and plasma sputtering, the growth rate is proportional to the (local) partial pressure of the gaseous precursors or reactants
-
In contrast, for most other gas-solid deposition techniques, for example chemical vapor deposition (CVD), pulsed-laser deposition (PLD), molecular beam epitaxy (MBE), and plasma sputtering, the growth rate is proportional to the (local) partial pressure of the gaseous precursors or reactants.
-
-
-
-
14
-
-
34547740218
-
-
J. Bachmann, J. Jing, S. Barth, S. Hao, S. Mathur, U. Gösele, K. Nielsch, J. Am. Chem. Soc. 2007, 129, 9554-9555.
-
(2007)
J. Am. Chem. Soc
, vol.129
, pp. 9554-9555
-
-
Bachmann, J.1
Jing, J.2
Barth, S.3
Hao, S.4
Mathur, S.5
Gösele, U.6
Nielsch, K.7
-
15
-
-
2442460552
-
-
Quantitative treatment of ALD kinetics
-
Quantitative treatment of ALD kinetics: R. L. Puurunen, Chem. Vap. Deposition 2003, 9, 327-332.
-
(2003)
Chem. Vap. Deposition
, vol.9
, pp. 327-332
-
-
Puurunen, R.L.1
-
17
-
-
0020702926
-
-
H. Schmidt, H. Scholze, A. Kaiser, J. Non-Cryst. Solids 1984, 63, 1-11.
-
(1984)
J. Non-Cryst. Solids
, vol.63
, pp. 1-11
-
-
Schmidt, H.1
Scholze, H.2
Kaiser, A.3
-
21
-
-
0033550312
-
-
c) T. Kobayashi, K. Miki, B. Nikaeen, H. Baba, Tetrahedron 1999, 55, 13179-13192.
-
(1999)
Tetrahedron
, vol.55
, pp. 13179-13192
-
-
Kobayashi, T.1
Miki, K.2
Nikaeen, B.3
Baba, H.4
|