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Volumn 5, Issue 4, 2011, Pages 263-270

Fault model and test procedure for phase change memory

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS; FAULT MODEL; FAULT PRIMITIVE; MEMORY TECHNOLOGY; NON-VOLATILE MEMORIES; TEST ALGORITHMS; TEST PROCEDURES;

EID: 79960264441     PISSN: 17518601     EISSN: None     Source Type: Journal    
DOI: 10.1049/iet-cdt.2010.0083     Document Type: Article
Times cited : (19)

References (34)
  • 2
    • 47249137494 scopus 로고    scopus 로고
    • Annual Device Research Conf.
    • 65th, June
    • Lam, C.: 'Phase-change memory', 65th Annual Device Research Conf., June 2007, p. 223-226
    • (2007) Phase-change memory , pp. 223-226
    • Lam, C.1
  • 27
    • 34547894299 scopus 로고    scopus 로고
    • J. Electron. Test. Theory Appl.
    • 10.1007/s10836-006-0629-6, 0923-8174
    • Mohammad, M.G., and Al-Terkawi, L.: 'Techniques for disturb fault collapsing', J. Electron. Test. Theory Appl., 2007, 23, (4), p. 263-26810.1007/s10836-006-0629-6 0923-8174
    • (2007) Techniques for disturb fault collapsing , vol.23 , Issue.4 , pp. 263-268
    • Mohammad, M.G.1    Al-Terkawi, L.2
  • 28
    • 39549084074 scopus 로고    scopus 로고
    • European Solid State Device Research Conf.
    • 37th, September
    • Lacaita, A., and Ielmini, D.: 'Status and challenges of PCM modeling', 37th European Solid State Device Research Conf., September 2007, p. 214-221
    • (2007) Status and challenges of PCM modeling , pp. 214-221
    • Lacaita, A.1    Ielmini, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.