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IEEE Proc. Aerospace Conf.
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Chalcogenide-based non-volatile memory technology
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Annual Device Research Conf.
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65th, June
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Lam, C.: 'Phase-change memory', 65th Annual Device Research Conf., June 2007, p. 223-226
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Phase-change memory
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Lam, C.1
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European Solid-State Circuits Conf.
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Muller, G., Nagel, N., Pinnow, C.-U., and Rohr, T.: 'Emerging non-volatile memory technologies', 29th European Solid-State Circuits Conf., September 2003, p. 37-44
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Emerging non-volatile memory technologies
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Muller, G.1
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European Solid-state Circuits Conf.
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Phase-change memory technology for embedded applications
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Ottogalli, F.1
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Pellizzer, F.3
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Symp. on VLSI Circuit Digest of Technical Paper
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An 8Mb demonstrator for high-density 1.8V phase-change memories
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Bedeschi, F.1
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6
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79960253421
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IEEE Int. Electron Devices Meeting Technical Digest
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December, p. 29.6.1-29.6.4
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Pirovano, A., Lacaita, A., Benvenuti, A., Pellizzer, F., Hudgens, S., and Bez, R.: 'Scaling analysis of phase-change memory technology', IEEE Int. Electron Devices Meeting Technical Digest, December 2003, p. 29.6.1-29.6.4
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Scaling analysis of phase-change memory technology
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Pirovano, A.1
Lacaita, A.2
Benvenuti, A.3
Pellizzer, F.4
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Bez, R.6
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7
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IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers
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February
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Gill, M., Lowrey, T., and Park, J.: 'Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications', IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers, February 2002, 1, p. 202-459
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Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications
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Gill, M.1
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European Solid-State Circuits Conf.
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30th, September
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Bedeschi, F., Bez, R., and Boffino, C.: et al. '4-Mb MOSFET-selected phase-change memory experimental chip', 30th European Solid-State Circuits Conf., September 2004, p. 207-210
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4-Mb MOSFET-selected phase-change memory experimental chip
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Bedeschi, F.1
Bez, R.2
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84942587615
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Int. Workshop on Memory Technology, Design and Testing
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July
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Salamon, D., and Cockbum, B.F.: 'An electrical simulation model for the chalcogenide phase-change memory cell', Int. Workshop on Memory Technology, Design and Testing, July 2003, p. 86-91
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An electrical simulation model for the chalcogenide phase-change memory cell
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Salamon, D.1
Cockbum, B.F.2
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10
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18844380171
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Non-Volatile Memory Technology Symp.
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November
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Wei, X., Shi, L., and Rajan, W.: et al. 'Universal HSPICE model for chalcogenide based phase change memory elements', Non-Volatile Memory Technology Symp., November 2004, p. 88-91
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Universal HSPICE model for chalcogenide based phase change memory elements
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Wei, X.1
Shi, L.2
Rajan, W.3
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11
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77956545798
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Int. Symp. on VLSI Technology, System and Applications
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October
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Hwang, Y., Hong, J., and Lee, S.: et al. 'Phase-change chalcogenide nonvolatile RAM completely based on CMOS technology', Int. Symp. on VLSI Technology, System and Applications, October 2003, p. 29-31
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Phase-change chalcogenide nonvolatile RAM completely based on CMOS technology
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Hwang, Y.1
Hong, J.2
Lee, S.3
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12
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18844371458
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Non-Volatile Memory Technology Symp.
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November
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Ramaswamy, S., Hunt, K., and Maimon, D.: et al. 'Progress on design and demonstration of the 4Mb chalcogenide-based random access memory', Non-Volatile Memory Technology Symp., November 2004, p. 137-142
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Progress on design and demonstration of the 4Mb chalcogenide-based random access memory
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Ramaswamy, S.1
Hunt, K.2
Maimon, D.3
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IEEE 2005 Custom Integrated Circuits Conf.
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September
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Osada, K., Kawahara, T., and Takemura, R.: et al. 'Phase change RAM operated with 1.5-V CMOS as low cost embedded memory', IEEE 2005 Custom Integrated Circuits Conf., September 2005, p. 431-434
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Phase change RAM operated with 1.5-V CMOS as low cost embedded memory
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Osada, K.1
Kawahara, T.2
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Symp. on VLSI Technology Digest of Technical Papers
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June
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Ha, Y., Yi, J., and Park, H.H.J.: et al. 'An edge contact type cell for phase change RAM featuring very low power consumption', Symp. on VLSI Technology Digest of Technical Papers, June 2003, p. 175-176
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An edge contact type cell for phase change RAM featuring very low power consumption
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Ha, Y.1
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IEEE Trans. Device Mater. Reliab.
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10.1109/TDMR.2004.836724, 1530-4388
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Pirovano, A., Redaelli, A., and Pellizzer, F.: et al. 'Reliability study of phase-change non-volatile memories', IEEE Trans. Device Mater. Reliab., 2004, 4, (3), p. 422-42710.1109/TDMR.2004.836724 1530-4388
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Reliability study of phase-change non-volatile memories
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IEEE Non-Volatile Semiconductor Memory Workshop
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August
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Lacaita, A.L., Redaelli, A., and Ielmini, D.: et al. 'Programming and disturb characteristics in non volatile phase change memories', IEEE Non-Volatile Semiconductor Memory Workshop, August 2004, p. 26-27
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Programming and disturb characteristics in non volatile phase change memories
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IEEE Trans. Nucl. Sci.
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10.1109/TNS.2003.821377, 0018-9499
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Maimon, J.D., Hunt, K.K., Burcin, L., and Rodgers, J.: 'Chalcogenide memory array: characterization and radiation effects', IEEE Trans. Nucl. Sci., 2003, 50, (6), p. 1878-188410.1109/TNS.2003.821377 0018-9499
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Chalcogenide memory array: characterization and radiation effects
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IEEE Trans. Electron Devices
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Pirovano, A., Lacaita, A., Pellizzer, F., Kostylev, S., Benvenuti, A., and Bez, R.: 'Low-field amprphous state resistance and threshold voltage drift in chalcogenide materials', IEEE Trans. Electron Devices, 2004, 51, (5), p. 714-71910.1109/TED.2004.825805 0018-9383
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Low-field amprphous state resistance and threshold voltage drift in chalcogenide materials
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10.1109/TED.2006.885527, 0018-9383
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Russo, U., Ielmini, D., Redaelli, A., and Lacaita, A.: 'Intrinsic data retention in nanoscaled phase change memories - Part I: Monte Carlo model for crystalization and percolation', IEEE Trans. Electron Devices, 2006, 53, (12), p. 3032-303910.1109/TED.2006.885527 0018-9383
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Intrinsic data retention in nanoscaled phase change memories - Part I: Monte Carlo model for crystalization and percolation
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IEEE Trans. Electron Devices
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10.1109/TED.2006.888752, 0018-9383
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Ielmini, D., Lacaita, A., and Mantegazza, D.: 'Recovery and drift dynamics of resistance and threshold voltages in phase-change memories', IEEE Trans. Electron Devices, 2007, 54, (2), p. 308-31510.1109/TED.2006.888752 0018-9383
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Recovery and drift dynamics of resistance and threshold voltages in phase-change memories
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Ielmini, D.1
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Int. Conf. on VLSI Design
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19th, January
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Mohammad, M.G., Terkawi, L., and Albasman, M.: 'Phase change memory faults', 19th Int. Conf. on VLSI Design, January 2006, p. 6-11
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Phase change memory faults
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Mohammad, M.G.1
Terkawi, L.2
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Non-Volatile Memory Technology Symp.
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October
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Shi, L., Chong, T., and Li, J.: et al. 'Thermal modeling and simulation of nonvolatile and non-rotating phase change memory cell', Non-Volatile Memory Technology Symp., October 2004, p. 83-87
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Thermal modeling and simulation of nonvolatile and non-rotating phase change memory cell
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Shi, L.1
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IEEE Electron Device Lett.
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10.1109/LED.2007.905367, 0741-3106
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Mantegazza, D., Ielmini, D., Pirovano, A., and Lacaita, A.: 'Anomalous cells with low reset resistance in phase-change memory arrays', IEEE Electron Device Lett., 2007, 28, (10), p. 865-86710.1109/LED.2007.905367 0741-3106
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Anomalous cells with low reset resistance in phase-change memory arrays
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Trans. Comput. Aided Des. Integr. Circuits and Syst.
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10.1109/TCAD.2005.847941
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Optimizing program disturb faults test using defect-based testing
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Techniques for disturb fault collapsing
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European Solid State Device Research Conf.
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37th, September
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Lacaita, A., and Ielmini, D.: 'Status and challenges of PCM modeling', 37th European Solid State Device Research Conf., September 2007, p. 214-221
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Status and challenges of PCM modeling
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IEEE Trans. Electron Devices
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10.1109/TED.2007.913573, 0018-9383
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Russo, U., Ielmini, D., Redaelli, A., and Lacaita, A.: 'Modeling of programming and read performance in phase-change memories-part II: program disturb and mixed-scaling approach', IEEE Trans. Electron Devices, 2008, 55, (2), p. 515-52210.1109/TED.2007.913573 0018-9383
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Modeling of programming and read performance in phase-change memories-part II: program disturb and mixed-scaling approach
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Electrical characterization of anomalous cells in phase change memory arrays
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Mantegazza, D.1
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Int. Reliability Physics Symp.
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42nd, April
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Itri, A., Ielmini, D., Lacaita, A., Pellizzer, F., Pirovano, A., and Bez, R.: 'Analysis and phase-transformation dynamics and estimation of amorphous-chalcogenide fraction in phase-change memories', 42nd Int. Reliability Physics Symp., April 2004, p. 209-215
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Analysis and phase-transformation dynamics and estimation of amorphous-chalcogenide fraction in phase-change memories
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Itri, A.1
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Cheng, K.-L., Yeh, J.-C., Wang, C.-W., Huang, C.-T., and Wu, C.-W.: 'RAMSES-FT: a fault simulator for flash memory testing and diagnostics', VLSI Test Symp., 2002, p. 281-286
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RAMSES-FT: a fault simulator for flash memory testing and diagnostics
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Cheng, K.1
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