Phase-change memory

65th DRC Device Research Conference

Volumn , Issue , 2007, Pages 223-226

  Lam, Chung ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAPS; PULSE CODE MODULATION;

PHASE CHANGE MEMORY (PCM); ROAD MAPS;

PHASE CHANGE MEMORY;

EID: 47249137494     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2007.4373728     Document Type: Conference Paper

References (7)

1. S. R. Ovshinsky, "Reversible Electrical Switching Phenomena in Disordered Structures," Phys. Rev. Lett. Vol. 21, 1968, p. 1450.
2. S. Lai, T. Lowrey, "OUM - A 180 nm nonvolatile memory cell element technology for stand-alone and embedded applications," 36.5, IEDM Tech. Dig., 2001.
3. Y. C. Chen, et. al., "Ultra-Thin Phase-Change Bridge Memory Device using GeSb," 30.3, IEDM Tech. Dig., 2006.
4. T. D. Happ, et. al., "Novel One-Mask Self-Heating Pillar Phasechange Memory," Symp. VLSI Tech.. 2006.
5. W. Czubatyj et al, "Current Reduction in Ovonic Memory Devices," E*PCOS 2006.
6. S. J. Ahn et al, "Highly Reliable 50nm Contact Cell Technology for 256Mb PRAM," Symp. VLSI Tech. 2005.
7. J.H. Oh et al, "Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology," IEDM Dig. 2006.