Thermal modeling and simulation of nonvolatile and non-rotating phase change memory cell

Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004

Volumn , Issue , 2004, Pages 83-87

  Shi, L P ^a   Chong, T C ^a   Li, J M ^a   Koh, Darry S C ^a,b   Zhao, R ^a   Yang, H X ^a,b   Tan, P K ^a   Wei, X Q ^a,b   Song, W D ^a  

^a DATA STORAGE INSTITUTE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

And Device simulation; FEM; Nonvolatile solid state memory; Phase Change memory; Phase change thin films

Indexed keywords

DEVICE SIMULATION; NONVOLATILE SOLID STATE MEMORY; PHASE CHANGE MEMORY; PHASE CHANGE THIN FILMS;

COMPUTER SIMULATION; ELECTRODES; FINITE ELEMENT METHOD; GEOMETRY; RANDOM ACCESS STORAGE; SOLID STATE DEVICE STRUCTURES; THERMAL EFFECTS; THIN FILMS;

DATA STORAGE EQUIPMENT;

EID: 18844448387     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. R. Ovshinsky, Phys. Review. Letter 21 (1968) 1450.
2. Stefan Lai and Tyler Lowrey, "OUM-A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications", IEDM 2001.
3. Stefan Lai, "Current status of the phase change memory and its future", IEDM 2003
4. L.P. Shi, T.C. Chong, Li JM, Yang HX and Mou JQ "Thermal analysis of nonvolatile and non rotation phase change memory cell", MRS 2003 Fall proceeding.