Phase-change memory technology for embedded applications

ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference

Volumn , Issue , 2004, Pages 293-296

  Ottogalli, F ^a   Pirovano, A ^a   Pellizzer, F ^a   Tosi, M ^a   Zuliani, P ^a   Bonetalli, P ^a   Bez, R ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EMBEDDED SYSTEMS; MOSFET DEVICES; NAND CIRCUITS; NONVOLATILE STORAGE; OPTIMIZATION; STATISTICAL METHODS; THIN FILMS;

CHALCOGENIDE; OVONIC UNIFIED MEMORY (OUM); PHASE-CHANGE MEMORY (PCM); RESET PULSES;

PHASE CHANGING CIRCUITS;

EID: 17644367551     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. S. Lai, "Current status of the phase-change memory and its future", IEDM Tech. Dig., 2003.
2. Y. N. Hwang et al., "Writing current reduction for high-density phase-change memory", IEDM Tech. Dig., 2003.
3. Y. N. Hwang et al., "Full integration and reliability evaluation of phase-change RAM based on 0.24 μm CMOS technology", Symp. on VLSI Tech., 2003.
4. A. Pirovano et al., "Scaling analysis of phase-change memory technology", IEDM Tech. Dig., 2003.
5. F. Pellizzer et al., "Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications", Symp. on VLSI Tech., 2004.
6. S. Lai and T. Lowrey, "OUM - A 180 nm nonvolatile memory cell element technology for stand-alone and embedded applications", IEDM Tech. Dig., 2001.
7. F. Bedeschi et al, "An 8Mb Demonstrator for High Density 1.8V Phase-Change Memories", Symp. on VLSI Circ., 2004.