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Volumn 2003-January, Issue , 2003, Pages 86-91

An electrical simulation model for the chalcogenide phase-change memory cell

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGENIDES; GLASS; HEATING; PHASE TRANSITIONS;

EID: 84942587615     PISSN: 10874852     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MTDT.2003.1222366     Document Type: Conference Paper
Times cited : (12)

References (16)
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  • 2
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    • Chalcogenide glass bistable resistivity (Ovonic) memories
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    • A. V. Pohm, C. H. Sie, R. R. Uttecht, V. Kao, and O. Agrawal, "Chalcogenide Glass Bistable Resistivity (Ovonic) Memories," IEEE Trans. Magn., vol. 6, no. 3, Sept. 1970.
    • (1970) IEEE Trans. Magn. , vol.6 , Issue.3
    • Pohm, A.V.1    Sie, C.H.2    Uttecht, R.R.3    Kao, V.4    Agrawal, O.5
  • 3
    • 0014853764 scopus 로고
    • Nonvolatile and reprogrammable, the read-mostly memory is here
    • Sept. 28
    • R. G. Neale, D. L. Nelson, and G. E. Moore, "Nonvolatile and reprogrammable, the read-mostly memory is here," Electronics, Sept. 28, 1970, pp. 56-60.
    • (1970) Electronics , pp. 56-60
    • Neale, R.G.1    Nelson, D.L.2    Moore, G.E.3
  • 4
    • 0005158609 scopus 로고
    • Rapid-phase transitions of GeTe-Sb2 Te3 pseudobinary amorphous thin films for an optical disk memory
    • Mar. 1
    • N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira and M. Takao, "Rapid-phase transitions of GeTe-Sb2 Te3 pseudobinary amorphous thin films for an optical disk memory," J. Appl. Phys., vol. 69, no. 5, Mar. 1, 1991.
    • (1991) J. Appl. Phys. , vol.69 , Issue.5
    • Yamada, N.1    Ohno, E.2    Nishiuchi, K.3    Akahira, N.4    Takao, M.5
  • 5
    • 0001415235 scopus 로고
    • Chalcogenide glasses
    • ch. 7 in J. Zarzycki (vol. ed.), Glasses and Amorphous Materials, R. W. Cahn, P. Haasen and E. J. Kramer (eds), VCH, Weinheim, Germany
    • S. R. Elliott, "Chalcogenide Glasses," ch. 7 in J. Zarzycki (vol. ed.), Glasses and Amorphous Materials, vol. 9 of R. W. Cahn, P. Haasen and E. J. Kramer (eds), Materials Science and Technology: A Comprehensive Treatment, VCH, Weinheim, Germany, 1991.
    • (1991) Materials Science and Technology: A Comprehensive Treatment , vol.9
    • Elliott, S.R.1
  • 9
    • 0031077062 scopus 로고    scopus 로고
    • A guideline for designing chalcogenide-based glasses for threshold switching characteristics
    • Feb.
    • S. Prakash et al., "A Guideline for Designing Chalcogenide-Based Glasses for Threshold Switching Characteristics," IEEE Electron Dev. Let., v. 18, no. 2, Feb. 1997, pp. 45-47.
    • (1997) IEEE Electron Dev. Let. , vol.18 , Issue.2 , pp. 45-47
    • Prakash, S.1
  • 11
    • 0035717521 scopus 로고    scopus 로고
    • OUM - A 180 nm nonvolatile memory cell element technology for stand-alone and embedded applications
    • paper 36.5
    • S. Lai and T. Lowrey, "OUM - A 180 nm Nonvolatile Memory Cell Element Technology for Stand-alone and Embedded Applications," IEDM 2001, paper 36.5.
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    • Lai, S.1    Lowrey, T.2
  • 12
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    • Ovonic unified memory - A high-performance nonvolatile memory technology for stand-alone memory and embedded applications
    • M. Gill, T. Lowrey, and J. Park, "Ovonic Unified Memory - A High-Performance Nonvolatile Memory Technology for Stand-Alone Memory and Embedded Applications," ISSCC 2002, pp. 202-203.
    • ISSCC 2002 , pp. 202-203
    • Gill, M.1    Lowrey, T.2    Park, J.3
  • 14
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    • L. Geppert, "The New Indelible Memories," IEEE Spectrum, v. 40, no. 3, Mar. 2003, pp. 49-54.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.