Electrical characterization of anomalous cells in phase change memory arrays

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Mantegazza, D ^a   Ielmini, D ^a   Pirovano, A ^b   Gleixner, B ^c   Lacaita, A L ^a   Varesi, E ^b   Pellizzer, F ^b   Bez, R ^b  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES;

ELECTRICAL CHARACTERIZATIONS; IN PHASE; LOGIC STATES; PROBABILITY OF ERROR; PROGRAMMING WINDOW;

PHASE CHANGE MEMORY;

EID: 46049094660     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346906     Document Type: Conference Paper

References (8)

1. S. Lai, "Current status of the phase change memory and its future", IEDM Tech. Dig., 907-910, 2004.
2. S. Ahn et al., "Highly manufacturable high density phase change memory of 64Mb and beyond", IEDM Tech. Dig., 255-258, 2003.
3. F. Pellizzer et al., "An 8Mb demonstrator for high-density 1.8V Phase-Change Memories ", VLSI Tech. Symp., 18-19, 2004.
4. F. Pellizzer et al., "A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications", VLSI Tech. Symp., 150-151, 2006.
5. D. Ielmini, et al., "Analysis of phase distribution in phasechange nonvolatile memories", IEEE Electron Device Lett., 25, 507-509, 2004.
6. D. Ielmini, et al., "Assessment of threshold switching dynamics in phase-change chalcogenide memories", IEDM Tech. Dig., 897-900, 2005.
7. A. Pirovano, et al., "Scaling Analysis of Phase-Change Memory Technology",iEDM Tech. Dig., 699-702, 2003.
8. A. Pirovano, et al., "Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials", IEEE Trans. Electron Dev. 51, 714-719, 2004.