Phase change RAM operated with 1.5-V CMOS as low cost embedded memory

Proceedings of the Custom Integrated Circuits Conference

Volumn 2005, Issue , 2005, Pages 431-434

  Osada, K ^a   Kawahara, T ^a   Takemura, R ^a   Kitai, N ^a   Takaura, N ^a   Matsuzaki, N ^a   Kurotsuchi, K ^a   Moriya, H ^a   Moniwa, M ^b  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; EMBEDDED SYSTEMS; PHASE CHANGING CIRCUITS; VOLTAGE CONTROL;

BITLINE VOLTAGE; EMBEDDED MEMORY; MEMORY CELLS; PHASE CHANGE RAM;

RANDOM ACCESS STORAGE;

EID: 33847171504     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2005.1568698     Document Type: Conference Paper

References (3)

1. S. Lai, et al., "OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications," in IEDM Tech. Dig., Dec. 2001, pp. 803-806.
2. F. Pellizzer, et al., "Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications," in Symp. VLSI Technology Dig., June 2004, pp. 18-19.
3. N. Takaura, et al., "A GeSbTe phase-change memory cell featuring a tungsten heater electrode for low-power, highly stable, and short-read-cycle operations," in IEDM Tech. Dig., Dec. 2003, pp. 37.2.1-37.2.4.