Intrinsic data retention in nanoscaled phase-change memories - Part I: Monte Carlo model for crystallization and percolation

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 3032-3039

  Russo, Ugo ^b   Ielmini, Daniele ^a,b   Redaelli, Andrea ^a,b   Lacaita, Andrea L ^a,b  

^a IEEE   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Amorphous semiconductors; Chalcogenide; Crystal growth; Nonvolatile memories; Phase change memory (PCM)

Indexed keywords

DATA RETENTION; STATISTICAL DISTRIBUTION; STATISTICAL EXTRAPOLATIONS; THERMAL ACTIVATED CRYSTALLIZATION;

AMORPHOUS SEMICONDUCTORS; CHALCOGENIDES; CRYSTAL GROWTH; CRYSTALLIZATION; DATA REDUCTION; MONTE CARLO METHODS; NANOTECHNOLOGY; NONVOLATILE STORAGE; PERCOLATION (COMPUTER STORAGE);

PHASE CHANGE MEMORY;

EID: 33947243961     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885527     Document Type: Article

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